SMBJ SERIES
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
VOLTAGE RANGE
FEATURES
* For surface mount application
* Built-in strain relief
* Excellent clamping capability
* Low profile package
* Fast response time: Typically less than
1.0ps from 0 volt to BV min.
* Typical I
R
less than 1
µ
A above 10V
* High temperature soldering guaranteed:
260 C / 10 seconds at terminals
5.0 to
200
Volts
600 Watts Peak Power
DO-214AA(SMB)
.083(2.11)
.075(1.91)
.155(3.94)
.130(3.30)
.185(4.70)
.160(4.06)
.012(0.31)
.006(0.15)
.096(2.44)
.083(2.13)
.050(1.27)
.030(0.76)
.008
MAX.
(.203)
.220(5.59)
.200(5.08)
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end except Bidirectional
* Mounting position: Any
* Weight: 0.093 grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATINGS
Peak Power Dissipation at T
A
=25 C, T
P
=1ms(NOTE 1)
Peak Forward Surge Current at 8.3ms Single Half Sine-Wave
superimposed on rated load (JEDEC method) (NOTE 3)
Maximum Instantenous Forward Voltage at
0.5A
for
Unidirectional only
Operating and Storage Temperature Range
SYMBOL
P
PK
I
FSM
V
F
T
J
, T
STG
VALUE
Minimum 600
100
1.2
-55 to +150
UNITS
Watts
Amps
Volts
C
NOTES:
1. Non-repetitive current pulse per Fig. 3 and derated above T
A
=25 C per Fig. 2.
2
2. Mounted on Copper Pad area of 5.0mm (.013mm Thick) to each terminal.
3. 8.3ms single half sine-wave, duty cycle = 4 pulses per minute maximum.
DEVICES FOR BIPOLAR APPLICATIONS
1. For Bidirectional use C or CA Suffix for types SMBJ5.0 thru SMBJ200.
2. Electrical characteristics apply in both directions.
250
RATING AND CHARACTERISTIC CURVES (SMBJ SERIES)
FIG.1-PEAK PULSE POWER DERATING CURVE
Non-Repetitive
Pulse Waveform
Shown in Fig. 3
T
A
=25 C
10
PEAK PULSE POWER(P
PP
) OR CURRENT(I
PP
)
DERATING IN PERCENTAGE
100
100
FIG.2-PULSE DERATING CURVE
P
PPM
, PEAK PULSE POWER, KW
75
50
1.0
5.0mm COPPER PAD AREAS
2
25
0.1
0.1
µ
s
1.0
µ
s
10
µ
s
100
µ
s
1.0ms
10ms
0
0
25
50
75
100
125
150
175
td, PULSE WIDTH, sec.
T
A
, AMBIENT TEMPERATURE ( C)
FIG.3-PULSE WAVE FORM
150
I
PPM
, PEAK PULSE CURRENT, %
tf=10
µ
s
Peak Value
I
PPM
T
A
=25 C
Pulse Width (td) is defined
as the point where the Peak
Current Deacys to 50% of Ipp
10,000
FIG.4-TYPICAL JUNCTION CAPACITANCE
T
J
=25 C
f=1.0MHz
Vsig=50mVp-p
5,000
100
2,000
Half Value-I
PPM
2
10/1000
µ
sec Waveform
as Defined by R.E.A.
Measued at
Zero Bias
1,000
C
J
, CAPACITANCE, pF
50
500
Measured at
Stand-Off
Voltage(V
MW
)
td
e-kt
0
0
1.0
2.0
3.0
4.0
200
t, TIME, ms
100
FIG.5-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
100
80
T
J
=T
J
max
8.3ms Single Half Sine-wave
JEDEC Method
50
20
I
FSM
, PEAK FORWARD SURGE
CURRENT, AMPERES
60
10
1.0
2.0
5.0
10
20
50
100
200
V(BR), BREAKDOWN VOLTAGE, VOLTS
40
20
10
1
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
251
Parametric
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Microchip MCU
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