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5KP7.5A

Description
Trans Voltage Suppressor Diode, 7.5V V(RWM), Unidirectional
CategoryDiscrete semiconductor    diode   
File Size661KB,4 Pages
ManufacturerGood-Ark
Environmental Compliance
Suzhou Gotech is a complete and comprehensive manufacturer of design, manufacturing, packaging and sales in the domestic semiconductor discrete device diode industry. From the independent development of front-end chips to various packaging technologies of back-end finished products, it has formed a complete industrial chain. The main products include leadless integrated circuit products and discrete device products with the latest packaging technology, automotive rectifier diodes, power modules, rectifier diode chips, silicon rectifier diodes, switching diodes, Zener diodes, micro bridge piles, military fuses, photovoltaic bypass modules, etc., with a total of more than 50 series and more than 1,500 varieties. The products are widely used in many fields such as aerospace, automobiles, green lighting, IT, household appliances and power supply devices for large equipment. Design and develop silver paste for solar cells and various electronic pastes, and develop and mass produce various new sensors in the field of the Internet of Things.
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5KP7.5A Overview

Trans Voltage Suppressor Diode, 7.5V V(RWM), Unidirectional

5KP7.5A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGood-Ark
Reach Compliance Codecompli
Breakdown voltage nominal value8.77 V
Maximum clamping voltage12.9 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage7.5 V
surface mountNO

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5KP5.0 thru 5KP110A
Transient Voltage Suppressors
Peak Pulse Power 5000W Stand-off Voltage 5.0 to 110V
Features
Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
Glass passivated junction
5000W peak pulse power capability with a 10/1000ms
waveform, repetition rate (duty cycle): 0.05%
Excellent clamping capability
Low incremental surge resistance
Fast response time: theoretically (with no parisitic inductance)
less than 1ps from 0 Volts to V
(BR)
for unidirectional and 5ns for
bidirectional types.
Devices with V
(BR)
> 10V I
D
are typically I
D
less than 1.0mA
High temperature soldering guaranteed:
265
o
C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
Mechanical Data
Case: Molded plastic body over glass passivated junction
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: The color band denotes the cathode, which is positive
with respect to the anode under normal TVS operation
Mounting Position: Any
Weight: 0.07 ounce, 2.1 grams
Maximum Ratings and Thermal Characteristics
Ratings at 25
o
C ambient temperature unless otherwise specified.
Parameter
Peak pulse power dissipation with a 10/1000
u
s waveform
(1)
Peak pulse current with a 10/1000
u
s waveform
(1)
Steady state power dissipation
at T
L
=75
o
C, lead lengths 0.375" (9.5mm)
(2)
Peak forward surge current, 8.3ms single half sine-wave
Instantaneous forward voltage at 100A
(3)
(3)
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
Value
Minimum 5000
See Next Table
8.0
500
3.5
-55 to +175
Unit
W
A
W
Amps
Volts
o
Operating junction and storage temperature range
Notes:
C
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
=25
o
C per Fig. 2
2. Mounted on copper pad area of 1.6 x 1.6" (40 x 40 mm) per Fig. 5.
3. Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
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