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TZQ5226B

Description
Zener Diode, 3.3V V(Z), 5%, 0.5W
CategoryDiscrete semiconductor    diode   
File Size434KB,5 Pages
ManufacturerExcel(Suzhou) Semiconductor Co., Ltd.
Websitehttp://www.excel-semi.com/
Download Datasheet Parametric View All

TZQ5226B Overview

Zener Diode, 3.3V V(Z), 5%, 0.5W

TZQ5226B Parametric

Parameter NameAttribute value
MakerExcel(Suzhou) Semiconductor Co., Ltd.
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance28 Ω
Number of components1
Maximum operating temperature200 °C
Maximum power dissipation0.5 W
Nominal reference voltage3.3 V
surface mountYES
Maximum voltage tolerance5%
Working test current20 mA

TZQ5226B Preview

Download Datasheet
TZQ5221B~TZQ5271B
Zener diode
Features
1. High reliability
2. Very sharp reverse characteristic
3. Low reverse current level
4. V
Z
-tolerance±5%
Applications
Voltage stabilization
Absolute Maximum Ratings
T
j
=25℃
Parameter
Power dissipation
Z-current
Junction temperature
Storage temperature range
Test Conditions
T
amb
≤75℃
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
200
-65~+200
Unit
mW
mA
Maximum Thermal Resistance
T
j
=25℃
Parameter
Junction ambient
Test Conditions
I=9.5mm(3/8”) T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
T
j
=25℃
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.1
Unit
V
Excel Semiconductor
www.excel-semi.com
FaxBack +86-512-66607370
Rev. 3e, 1-Nov-2006
1/5
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