LT4410AC datasheet, PDF - EEWORLD Datasheet

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LT4410AC: DescriptionPower Field-Effect Transistor, 11.6A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8; CategoryDiscrete semiconductor The transistor; File Size582KB，6 Pages; ManufacturerLITEON; Websitehttp://optoelectronics.liteon.com/en-global/Home/index; Environmental Compliance; Lite-On began producing LED lamps in 1975; the company has steadily grown to become one of the world's largest manufacturers of optoelectronics products by providing customers with visible and infrared product solutions. High-volume production of commercial and application-specific products, as well as strong R&D and vertical integration capabilities have proven to be key and differentiating factors in Lite-On's success.

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LT4410AC Overview

Power Field-Effect Transistor, 11.6A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8

LT4410AC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	LITEON
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	ULTRA-LOW RESISTANCE
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	11.6 A
Maximum drain-source on-resistance	0.018 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	255
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	46.4 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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LT4410AC/ LT4410AC-G

N-Channel 30-V (D-S) MOSFET

GENERAL DESCRIPTION

The LT4410AC is the N-Channel logic enhancement mode power

field effect transistors are produced using high cell density, DMOS

trench technology. This high density process is especially tailored

to minimize on-state resistance. These devices are particularly

suited for low voltage application such as cellular phone and

notebook computer power management and other battery

powered circuits where high-side switching and low in-line power

loss are needed in a very small outline surface mount package.

FEATURES

●

DS(ON)

=12m

=10V (Typ)

●

DS(ON)

=17m

=4.5V(Typ)

●

Super high density cell design for extremely low R

DS(ON)

●

Exceptional on-resistance and maximum DC current

capability

APPLICATIONS

●

Power Management in Note book

●

Portable Equipment

●

Battery Powered System

●

DC/DC Converter

●

Load Switch

●

DSC

PIN CONFIGURATION

(SOP-8)

Top View

Ordering Information:

LT4410AC (Pb-free)

LT4410AC-G (Green product-Halogen free)

Absolute Maximum Ratings

=25℃ Unless Otherwise Noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Maximum Power Dissipation

Operating Junction Temperature

Thermal Resistance-Junction to Ambient

The *

Symbol

DSS

GSS

=25℃

=70℃

=25℃

=70℃

θJA

Maximum

±20

11.6

9.2

46.4

2.08

1.33

-55 to 150

T≦10 sec

Steady State

Unit

℃

℃/W

The device mounted on 1in

FR4 board with 2 oz copper

Rev 2. Nov. 2010

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