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LL43

Description
Rectifier Diode, Schottky, 1 Element, 30V V(RRM)
CategoryDiscrete semiconductor    diode   
File Size266KB,3 Pages
ManufacturerExcel(Suzhou) Semiconductor Co., Ltd.
Websitehttp://www.excel-semi.com/
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LL43 Overview

Rectifier Diode, Schottky, 1 Element, 30V V(RRM)

LL43 Parametric

Parameter NameAttribute value
MakerExcel(Suzhou) Semiconductor Co., Ltd.
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.33 V
Maximum non-repetitive peak forward current4 A
Number of components1
Maximum operating temperature125 °C
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY

LL43 Preview

LL42/LL43
Schottky Barrier Diode
Features
1. High reliability
2. Low reverse current and low forward voltage
3. Small surface mounting type
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T
j
=25℃
Parameter
Repetitive peak reverse voltage
Forward continuous current
Repetitive peak forward surge current
Surge forward current
Power dissipation
Junction temperature
Storage temperature range
T
a
=25℃
t
p
<1 s,
δ<0.5,
T
a
=25℃
t
p
<10ms, T
a
=25℃
T
a
=65℃
Test Conditions
Symbol
V
RRM
I
F
I
FRM
I
FSM
P
tot
T
j
T
S
Value
30
200
500
4
200
125
-65~+150
Unit
V
mA
mA
A
mW
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Excel Semiconductor
www.excel-semi.com
FaxBack +86-512-67606917
Rev. 3g, 1-Sep-2009
1/3
LL42/LL43
Electrical Characteristics
T
j
=25℃
Parameter
Reverse breakdown voltage
Forward voltage
I
F
=10mA
I
F
=200mA
I
F
=2mA
I
F
=15mA
I
F
=50mA
I
F
=200mA
Reverse current
Pulse test t
p
<300μs,
δ<0.5
Capacitance
Reverse recovery time
V
R
=25V
V
R
=25V, T
j
=100℃
V
R
=1V, f=1MHz
I
F
=10mA, I
R
=10mA
I
rr
=1mA, R
L
=100Ω
LL42
LL42
LL43
LL43
LL43
LL43
Test Conditions
Type
Symbol
V
(BR)R
V
F
V
F
V
F
V
F
V
F
V
F
I
R
C
tot
t
rr
7.0
5.0
0.26
Min
30
0.4
1.0
0.33
0.45
0.65
1.0
0.5
100
Typ
Max
Unit
V
V
V
V
V
V
V
μA
pF
ns
Characteristics
(T
j
=25℃ unless otherwise specified)
P
tot
– Power dissipation (mW)
T
a
– Ambient temperature (℃)
I
F
– Forward current (mA)
V
F
– Instantaneous forward voltage (mV)
Figure 1. Admissible power dissipation
vs. Ambient temperature
Figure 2. Typical reverse characteristics
Excel Semiconductor
www.excel-semi.com
FaxBack +86-512-67606917
Rev. 3g, 1-Sep-2009
2/3
LL42/LL43
I
R
– Reverse leakage current (A)
Capacitance (pF)
V
R
– Reverse voltage (V)
V
R
– Reverse voltage (V)
Figure 3. Typical reverse characteristics
Figure 4. Typical capacitance vs. reverse
applied voltage
Dimensions in mm
Cathode identification
0.3
3.5±0.2
Glass Case
Mini Melf / SOD-80
JEDEC DO-213 AA
Excel Semiconductor
www.excel-semi.com
FaxBack +86-512-67606917
Rev. 3g, 1-Sep-2009
3/3
Φ1.5±0.1
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