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ESD5452N

Description
ESD5452N low power protection device
CategoryOther integrated circuit (IC)   
File Size170KB,6 Pages
ManufacturerWILLSEMI
Websitehttp://www.willsemi.com/
Shanghai Will Semiconductor Co., Ltd. is a semiconductor device design and sales company focusing on independent research and development, sales and services. The company was established in May 2007 and is headquartered in Shanghai Zhangjiang High-tech Park, known as the "Silicon Valley of China". It has offices in Shenzhen, Taiwan, China, Hong Kong and other places.
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ESD5452N Overview

ESD5452N low power protection device

Parameters

Product:ESD5452N


Configuration:bi-directional


Channel:2


Reverse Stand-off Voltage VRWM(V):±5


Reverse Breakdown Voltage VBR(@1mA)(V) (Min.):5.1


Peak Pulse Power PPK(8/20us)(W):80


Peak Pulse Current IPP(8/20us)(A):8


Clamping Voltage VCL(@IPP)(V):10


ESD(Contact)(kV):±30


Clamping Voltage VCL @ITLP = 16A(V):9


Junction Capacitance CJ(pF) (Typ.):17.5


Junction Capacitance CJ(pF) (Max.):22


Package:DFN1006-3L


Size(mm) (L*W):1.0*0.6

ESD5452N Preview

Download Datasheet
ESD5452N
ESD5452N
2-Lines, Bi-directional, Transient Voltage Suppressors
http//:www.sh-willsemi.com
Descriptions
The ESD5452N is a bi-directional TVS (Transient Voltage
Suppressor). It is specifically designed to protect sensitive
electronic components which are connected to low speed
data lines and control lines from over-stress caused by ESD
(Electrostatic Discharge), EFT (Electrical Fast Transients)
and Lightning.
The ESD5452N may be used to provide ESD protection up to
±30kV
(contact
and
air
discharge)
according
to
DFN1006-3L (Bottom View)
2
3
1
IEC61000-4-2, and withstand peak pulse current up to 8A
(8/20μs) according to IEC61000-4-5.
The ESD5452N is available in DFN1006-3L package.
Standard products are Pb-free and Halogen-free.
Circuit diagram
Features
Reverse stand-off voltage: ±5V Max
Transient protection for each line according to
IEC61000-4-2 (ESD): ±30kV (contact and air discharge)
IEC61000-4-4 (EFT): 40A (5/50ns)
IEC61000-4-5 (surge): 8A (8/20μs)
Capacitance: C
J
= 17.5pF typ.
Low leakage current: I
R
< 1nA typ.
Low clamping voltage: V
CL
= 9V typ. @ I
PP
= 16A (TLP)
Solid-state silicon technology
7 = Device code
* = Month code ( A~Z)
Marking (Top View)
7 *
Applications
Cellular handsets
Tablets
Laptops
Other portable devices
Network communication devices
Device
Order information
Package
Shipping
ESD5452N-3/TR
DFN1006-3L 10000/Tape&Reel
Will Semiconductor Ltd.
1
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