SPD82062B datasheet, PDF - EEWORLD Datasheet

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SPD82062B: DescriptionSPD82062B high power protection device; CategoryOther integrated circuit (IC); File Size260KB，3 Pages; ManufacturerWILLSEMI; Websitehttp://www.willsemi.com/; Shanghai Will Semiconductor Co., Ltd. is a semiconductor device design and sales company focusing on independent research and development, sales and services. The company was established in May 2007 and is headquartered in Shanghai Zhangjiang High-tech Park, known as the "Silicon Valley of China". It has offices in Shenzhen, Taiwan, China, Hong Kong and other places.

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SPD82062B Overview

SPD82062B high power protection device

Parameters

Product：SPD82062B

Configuration：bi-directional

Channel：1

Reverse Stand-off Voltage VR(V) (Max.)：6.5

Breakdown Voltage VBR(@IT)(V)(Min.) (Max.)：7.22-8.30

Reverse Leakage Current IR @ VR(uA)：500

Test Current IT(mA)：10

Peak Pulse Power PPK(@10/1000us)(W) (Max.)：600

Peak Pulse Current IPP(@10/1000us)(A) (Max.)：133

Clamping Voltage VC(@IPP)(V) (Max.)：11.2

Junction Capacitance CJ (pF) (Typ.)：-

Junction Capacitance CJ (pF) (Max.)：-

Package：SMB

Size(mm) (LxW)：5.3*3.5

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SPD82062B

1-Line, 600W, TVS

Http//:www.sh-willsemi.com

Descriptions

SPD82062B protect sensitive electronics against

voltage transients induced by inductive load switching

and lightning. Ideal for the protection of I/O interfaces,

bus and other integrated circuits.

Features



For surface mount application

Excellent clamping capability

Low profile package

Fast response time: Typically less than

1.0ps from 0V to 7.22V

Low inductance

GPP

SMB

SPD82062B

Mechanical Data



Case: Molded plastic

Mounting position: Any

Weight: 0.093 grams

Device

Schematic Diagram

Order information

Dim (mm)

5.3*3.5*2.3

Shipping

3000/Tape&Reel

SPD82062B-2/TR

Rating

Peak Pulse Power on 10/1000µs waveform

Peak Pulse Current of on 10/1000µs waveform

Operating Junction Temperature Range

Storage Temperature Range

Symbol

PPM

STG

Value

600

53.6

-55 to +150

Units

℃

Notes :

1. Mounted on 5.0mm

(0.03mm thick) Copper Pads to each teminal

Will Semiconductor Ltd.

Revision 1.2, 2014/12/07

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