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SEB751V-40

Description
Schottky Barrier Diode
CategoryDiscrete semiconductor   
File Size412KB,3 Pages
ManufacturerSINO-IC Microelectronic Co., Ltd.
Websitehttp://www.sino-ic.net
Shanghai Guangyu Ruixin Microelectronics Co., Ltd. specializes in the design, development and sales of semiconductor overvoltage protection devices and integrated circuits. It is one of the domestic suppliers that masters the core technology of semiconductor overvoltage protection devices and integrated circuits. They are used in communication systems, portable products, lithium battery protection, power system overvoltage protection, LED drive, etc.
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SEB751V-40 Overview

Schottky Barrier Diode

Features

Product Name: Schottky Barrier Diode


Product model: SEB751V-40




product features:


Small power mold type.


(VMD2)


Low VF


High reliability



Applications:


General rectification




Construction:


Silicon epitaxial planar




Package: SOD-323


SEB751V-40 Preview

Download Datasheet
SHANGHAI
MICROELECTRONICS CO., LTD.
Jan 2008
SEB751V-40
Schottky barrier diode
Features
Small power mold type.
(VMD2)
Low VF
High reliability
Revision:A
Applications
General rectification
Construction
Silicon epitaxial planer
Absolute maximum ratings (Ta=25℃)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak(60Hz, 1cyc
.
)
Junction temperature
Storage temperature
Symbol
V
RM
V
R
Limits
40
30
Unit
V
V
mA
mA
I
O
I
FSM
T
j
T
stg
30
200
125
-40
½
+125
Electrical characteristics (Ta=25℃)
Parameter
Forward voltage
Reverse current
Capacitance
between terminsls
Symbol
V
F
I
R
Ct
Min.
Typ.
2
Max.
0.37
0.5
Unit
V
uA
pF
Conditions
I
F
=1mA
V
R
=30V
VR=1V , f=1MHz
Control class may need to use
[i=s]This post was last edited by paulhyde on 2014-9-15 09:25[/i][[i]This post was last edited by hitliye on 2009-8-30 18:54[/i]]...
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