SHANGHAI
MICROELECTRONICS CO., LTD.
June 2006
SEUR840/SEUR860
Dual diode
FEATURES
●
Ultrafast with Soft Recovery .. . . . . . . 80~120ns
●
Operating Temperature . . . . . . . . . . . . . . .175℃
●
Reverse Voltage . . . . . . . . . . . . . . . . . . . . .600V
●
Avalanche Energy Rated
●
Planar Construction
Revision:A
Applications
●
Switching Power Supplies
●
Power Switching Circuits
●
General Purpose
Construction
●
Silicon epitaxial planar
Maximum Ratings and Electrical Characteristics, Single Diode @T
A
=25℃
Parameter
Continuous reverse voltage
Continuous Forward Current
Repetitive Peak Surge Current (Square Wave, 20kHz)
Nonrepetitive Peak Surge Current (Halfwave, 1 Phase, 60Hz
)
Power Dissipation
Storage temperature
Junction temperature
Thermal resistance junction to case.
Symbol
SEUR840
400
8
16
100
75
-65~+175
150
2
SEUR860
600
8
16
100
75
-65~+175
150
2
Unit
V
R
I
F
I
FRM
I
FSM
P
d
T
STG
T
j
R
θ
JC
V
A
A
A
W
℃
℃
℃/W
Electrical characteristics (Ta=25℃)/
SEUR840
Parameter
Forward voltage
SEUR860
Min
-
-
Symbol
V
F
Min
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
Max
1.3
1.0
100
-
500
-
120
100
50
40
Typ
-
-
Max
1.5
1.2
-
100
-
500
120
100
50
40
Unit
V
V
uA
uA
uA
uA
ns
ns
ns
ns
Conditions
I
F
=8A
I
F
=8A, T
C
= 150℃
V
R
=400V
V
R
=600V
V
R
=400V, T
C
= 150℃
V
R
=600V, T
C
= 150℃
I
F
= 8A, dI
F
/dt = 200A/us
I
F
= 1A, dI
F
/dt = 200A/us
I
F
= 8A, dI
F
/dt = 200A/us
I
F
= 8A, dI
F
/dt = 200A/us
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Reverse current
I
R
Reverse
time
recovery
trr
Time to reach peak
reverse current
Time from peak I
RM
t
a
t
b
-
-
SEUR840/860
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SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronics Co., Ltd.