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3DK13005D

Description
Silicon NPN High Power Switching Transistor
CategoryDiscrete semiconductor   
File Size118KB,2 Pages
ManufacturerYANGZHOU GENESIS-JINGLAI SEMICONDUCTOR MANUFACTURE Co.,LTD.
Download Datasheet View All

3DK13005D Overview

Silicon NPN High Power Switching Transistor

Features

Product Name: Silicon NPN High Power Switching Transistor


Product model: 3DK13005D


Product Usage:


Mainly used in energy-saving lamps, fluorescent lamp electronic ballast circuits and other switches and oscillation circuits.



product data:


Collector-emitter voltage VCEO: 400V


Collector-base voltage VCBO: 700V


Emitter-base voltage VEBO: 9V


DC current gain hFE: 10-40


Collector current IC: 5A


Collector power consumption TC=25℃


Ptot: 75W



Package: TO-220



3DK13005D Preview

Download Datasheet
扬州中芯晶来半导½制造有限公司
YANGZHOU GENESIS-JINGLAI SEMICONDUCTOR MANUFACTURE Co.,LTD
DK13005D
NPN
大功率开关晶½管
■用
主要用于节½灯、日光灯电子镇流器电路及其它开关、振荡电路。
■极限参数
符 号
V
CEO
V
CBO
V
EBO
I
C
P
tot
1
P
tot
2
T
jm
T
stg
极 限 值
400
700
9
5
75
1.75
150
-55~+150
单 ½
V
V
V
A
W
W
BCE
E
B
■外½结构
C
集电极-发射极电压
集电极-基极电压
发射极-基极电压
集电极电流
集电极功耗
T
C
=25℃
集电极功耗
T
a
=25℃
结温
贮存温度
TO-220
■电 特 性(T
a
=25℃)
项目
集电极-基极反向电流
发射极-基极反向电流
直流电流增益
集电集-发射极饱和电压
基极-发射极饱和电压
集电极-发射极击穿电压
特征频率
贮存时间
二极管正向压降
符号
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
(BR)CEO
f
T
t
s
V
F
V
CB
=700 V
V
EB
=9 V
V
CE
=5 V,
I
C
=0.5 A
I
C
=2 A,
I
B
=0.5 A
I
C
=2 A,
I
B
=0.5 A
I
C
=1 mA
V
CE
=5 V,
I
C
=0.5 A,
f=1MHz
I
C
=0.5 A(UI9600)
I
C
=2.5 A
测试条件
参数值
≤0.1
≤0.1
10~40
≤1.0
≤1.6
≥400
≥4
≤4.5
≤2.0
V
V
V
MHz
µs
V
单½
mA
mA
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