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3DK47

Description
Silicon NPN High Power Switching Transistor
CategoryDiscrete semiconductor   
File Size90KB,1 Pages
ManufacturerYANGZHOU GENESIS-JINGLAI SEMICONDUCTOR MANUFACTURE Co.,LTD.
Download Datasheet View All

3DK47 Overview

Silicon NPN High Power Switching Transistor

Features

Product Name: Silicon NPN High Power Switching Transistor


Product model: 3DK47


Product Usage:


It is mainly used for electronic energy-saving lamps with a supply voltage of 110V~130V, non-voltage-doubling rectification, electronic ballasts for fluorescent lamps and other oscillation circuits.



product data:


Collector-emitter voltage VCEO: 220V


Collector-base voltage VCBO: 350V


Emitter-base voltage VEBO: 9V


DC current gain hFE: 10-40


Collector current IC: 8A


Collector power consumption TC=25℃


Ptot: 75 W (TO-220)



Package: TO-220



3DK47 Preview

Download Datasheet
扬州中芯晶来半导½制造有限公司
YANGZHOU GENESIS-JINGLAI SEMICONDUCTOR MANUFACTURE Co.,LTD
DK47
NPN
大功率开关晶½管
■用
主要用于供电电压为
110V~130V、非倍压整流的电子节½灯、日光灯电子镇流器及其它振荡电路等。
■极限参数
符 号
V
CEO
V
CBO
V
EBO
I
C
P
tot
1
P
tot
2
T
jm
T
stg
极 限 值
220
350
9
8
75
2
150
-55~+150
单 ½
V
V
V
A
W
W
B CE
■外½结构
集电极-发射极电压
集电极-基极电压
发射极-基极电压
集电极电流
集电极功耗
T
C
=25℃
集电极功耗
T
a
=25℃
结温
贮存温度
TO-220
■电 特 性(T
a
=25℃)
符号
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
(BR)CEO
t
S
f
T
V
CB
=350V
V
EB
=9V
V
CE
=5V,
I
C
=2A
I
C
=2A ,
I
B
=0.4A
I
C
=5A ,
I
B
=1A
I
C
=2A ,
I
B
=0.4A
I
C
=5A , I
B
=1A
I
C
=1mA
I
C
=0.5 A,
I
B
=0.1 A,
V
CE
=5 V
V
CE
=10V,I
C
=0.5A, f=1MHz
测试条件
参数值
≤0.2
≤1
10~40
≤1
≤2
≤1.2
≤1.6
≥220
≤3.5
≥4
V
V
V
µs
MHz
单½
mA
mA
集电极-基极反向电流
发射极-基极反向电流
直流电流增益
集电集-发射极饱和电压
基极-发射极饱和电压
集电极-发射极击穿电压
贮存时间
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