EEWORLDEEWORLDEEWORLD

Part Number

Search

BC516

Description
TRANSISTOR (PNP)
CategoryDiscrete semiconductor   
File Size110KB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

Download Datasheet Online Shopping View All

BC516 Online Shopping

Suppliers Part Number Price MOQ In stock  
BC516 - - View Buy Now

BC516 Overview

TRANSISTOR (PNP)

Features

Product Name: TRANSISTOR (PNP) transistor


Product model: BC516


Product Description:


High DC Current Gain


High Collector Current



parameter:


Polarity: PNP


PCM (collector maximum power consumption): 625mW


Ic (collector current): 1000mA


BVcbo (collector-base breakdown voltage): 40V


BVceo (set-to-shoot breakdown voltage): 30V


BVebo (emitter-base breakdown voltage): 10V


hFE (DC current gain): 30000


VCE(sat) (collector-emitter saturation voltage): 1V


fT (transition frequency): 200+MHz


Package: TO-92

BC516 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
BC516
TRANSISTOR (PNP)
1.COLLECTOR
FEATURES
High DC Current Gain
High Collector Current
2.BASE
3.EMITTER
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance Junction To Ambient
Junction Temperature
Storage Temperature
Value
-40
-30
-10
-1
625
200
150
-55~+150
Unit
V
V
V
A
mW
℃/W
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter
breakdown
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE
f
T
Test
conditions
Min
-40
-30
-10
-0.1
30000
-1
-1.5
-1.4
200
V
V
V
MHz
Typ
Max
Unit
V
V
V
μA
I
C
= -0.1mA,I
E
=0
I
C
=-2mA,I
B
=0
I
E
=-10μA,I
C
=0
V
CB
=-30V,I
E
=0
V
CE
=-2V, I
C
=-20mA
I
C
=-100mA,I
B
=-0.1mA
I
C
=-100mA,I
B
=-0.1mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V,I
C
=-10mA, f=100MHz
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
A,Dec,2010
EEWORLD University Hall----TI double-head induction cooker controller solution
TI double-head induction cooker controller solution : https://training.eeworld.com.cn/course/310? ? For corporate customers only, the dual-head induction cooker controller solution developed by TI is ...
chenyy Talking
[Raspberry Pi Pico Review] How to use the buttons
[i=s]This post was last edited by jinglixixi on 2021-4-15 20:21[/i]A button is a commonly used input device, and its usage is divided into two categories, namely query mode and interrupt mode. Since t...
jinglixixi DIY/Open Source Hardware
CB140 core board voltage value difference solution
[color=#ff0000]Question: [/color] [color=#ff0000]The test result of adding 3.3V voltage directly to the core board of CB140 shows the problem 1 [/color] [color=#000000] [/color] [color=#000000]Answer:...
明远智睿Lan Integrated technical exchanges
Did anyone attend the TI seminar on June 24?
RT, you need to bring a laptop, and then they said there is a trade-in, you can exchange any MCU development kit from other manufacturers for the LM3S8962 evaluation kit! ~...
wanghongyang TI Technology Forum
Why is the NAND partition of WinCE used as a USB disk and not recognized by PC?
Hello everyone, I want to ask a question. I want to make the FAT partition of wince's nand be displayed as a USB disk on the pc. Now it can be displayed in "My Computer". But I can't open it. It asks ...
love3song Embedded System
Powering Launchpad with NOKIA battery
Recently I was thinking about using NOKIA (1020mAh, 3.8Wh, 3.7V) to power F28027. First I thought about using a low voltage dropout LDO to stabilize 3.3V and connect it to the microcontroller, but the...
liuming759 Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号