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BCP53

Description
PNP transistor
CategoryDiscrete semiconductor   
File Size1MB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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PNP transistor

Features

Product Name: PNP Transistor


Product model: BCP53



Product parameters:


Pcm (maximum power dissipation): 1500mW


Ic (collector current): 1000mA


BVcbo (collector-base breakdown voltage): 100V


BVceo (Collector-Emitter Breakdown Voltage): 80V


BVebo (emitter-base breakdown voltage): 5V


hFE (current gain): Min: 63, Max: 250


VCE (sat) saturation voltage drop: 0.5V


fT (transition frequency): 100MHz



Package: SOT-223

BCP53 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate Transistors
BCP51,52,53
FEATURES
TRANSISTOR (PNP)
SOT-223
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP54...BCP56 (NPN)
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Storage Temperature Range
BCP51
-45
-45
BCP52
-60
-60
-5
-1
1.5
94
-65~+150
BCP53
-100
-80
1. BASE
2. COLLECTOR
3. EMITTER
Unit
V
V
V
A
W
℃/W
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
BCP51
BCP52
BCP53
Collector-emitter breakdown voltage
BCP51
BCP52
BCP53
Base-emitter breakdown voltage
Collector cut-off current
V
(BR)EBO
I
CBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V
CE(sat)
V
BE
f
T
I
C
= -10μA,I
E
=0
V
CB
= -30 V, I
E
=0
V
CE
=-2V, I
C
=-5mA
V
CE
= -2V, I
C
=-150m A
V
CE
= -2V, I
C
=-500m A
I
C
=-500mA,I
B
=-50mA
V
CE
=-2V, I
C
=-500m A
V
CE
=-10V,I
C
=-50mA,f=100MHz
100
25
63
25
-0.5
-1
V
V
MHz
250
V
(BR)CEO
I
C
= -10mA,I
B
=0
V
(BR)CBO
I
C
=- 0.1mA,I
E
=0
Symbol
Test conditions
Min
-45
-60
-100
-45
-60
-80
-5
-100
V
nA
V
V
Max
Unit
CLASSIFICATION OF h
FE(2)
Rank
Range
BCP51-10, BCP52-10, BCP53-10
63-160
BCP51-16, BCP52-16, BCP53-16
100-250
A,Jun,2011
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