HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HI200102
Issued Date : 1998.07.01
Revised Date : 2005.07.13
Page No. : 1/3
HI122
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HI122 is designed of general purpose and low speed switching applications.
TO-251
Darlington Schematic
Features
•
High DC current gain
•
Bult-in a damper diode at E-C
B
R1
R2
C
Absolute Maximum Ratings
(T
A
=25°C)
E
•
Maximum Temperatures
Storage Temperature .............................................................................................................................. -55~+150°C
Junction Temperature ......................................................................................................................................+150°C
•
Maximum Power Dissipation
Total Power Dissipation (T
C
=25°C) ...................................................................................................................... 20W
•
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage........................................................................................................................ 100 V
BV
CEO
Collector to Emitter Voltage ..................................................................................................................... 100 V
BV
EBO
Emitter to Base Voltage.............................................................................................................................. 5 V
I
C
Collector Current ............................................................................................................................................... 5 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)
*V
BE(on)
*h
FE1
*h
FE2
Cob
Min.
100
5
-
-
-
-
-
-
-
1K
100
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
130
Max.
-
-
10
10
2
2
4
4.5
2.8
12K
-
-
pF
Unit
V
V
uA
uA
mA
V
V
V
V
I
C
=1mA
I
E
=1mA
V
CB
=100V
V
CE
=100V
V
EB
=5V
I
C
=4A, I
B
=16mA
I
C
=8A, I
B
=80mA
I
C
=8A, I
B
=80mA
V
CE
=4V, I
C
=4A
V
CE
=4V, I
C
=4A
V
CE
=4V, I
C
=8A
V
CB
=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HI122
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-251 Dimension
A
Tab
Spec. No. : HI200102
Issued Date : 1998.07.01
Revised Date : 2005.07.13
Page No. : 2/3
M
F
a1
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
I
C
G
Date Code
1 2 2
Control Code
Note: Green label is used for pb-free packing
1
2
3
Pin Style: 1.Base 2/Tab.Collector 3.Emitter
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
F
G
H1
K
K1
L
M
a1
a2
Min.
6.35
4.80
1.30
5.40
6.75
0.50
0.40
0.90
2.20
0.40
-
Max.
6.80
5.50
1.70
6.25
8.00
0.90
0.90
1.50
2.40
0.65
*2.30
L
K
K1
H1
a1
*: Typical, Unit: mm
a2
a2
3-Lead TO-251
Plastic Package
HSMC Package Code: I
A
B
C
D
a1
E
G
Marking:
M
F
y1
a1
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
I
1 2 2
Date Code
Control Code
I
H
y1
y1
Note: Green label is used for pb-free packing
Pin Style: 1.Base 2.Collector 3.Emitter
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
J
K
K1
H1
a2
y2
a2
y2
a1
DIM
A
B
C
D
E
F
G
H
H1
I
J
K
K1
M
a1
a2
y1
y2
Min.
6.40
-
5.04
-
0.40
0.50
5.90
-
-
-
-
-
-
2.20
0.40
2.10
-
-
Max.
6.80
6.00
5.64
*4.34
0.80
0.90
6.30
*1.80
*9.30
*16.10
*0.80
0.96
*0.76
2.40
0.60
2.50
5
o
3
o
3-Lead TO-251
Plastic Package
HSMC Package Code: I
*: Typical, Unit: mm
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HI122
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HI200102
Issued Date : 1998.07.01
Revised Date : 2005.07.13
Page No. : 3/3
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
HI122
HSMC Product Specification
DSP and ARM Processors
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