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BLV88N30

Description
300V, 88A, N-channel enhancement mode MOSFET
CategoryDiscrete semiconductor   
File Size827KB,3 Pages
ManufacturerShanghai Belling
Websitehttp://www.belling.com.cn/

Shanghai Belling Co., Ltd. was founded in September 1988 and is the first Sino-foreign joint venture in the domestic integrated circuit industry. It was restructured and listed in August 1998, becoming the first listed company in the domestic integrated circuit industry. In April 2009, it was directly controlled by China Electronics Information Industry Group Co., Ltd. Shanghai Belling is an integrated circuit design enterprise within the national planning layout. It has a national enterprise technology center and focuses on integrated circuit (IC) design and application solution development. It is a major supplier of analog IC products in China and has formed three major business layouts: smart meter chips, power management, and general analog products. Up to now, the company has applied for 488 patents and authorized 299 patents, including 125 invention patents.  

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BLV88N30 Overview

300V, 88A, N-channel enhancement mode MOSFET

Features

BLV88N30 300V, 88A, N-channel enhancement mode MOSFET


N-channel Enhancement Mode Metal Oxide Semiconductor Field Effect Transistor


Maximum drain-source voltage Vds: 300V


Gate-source voltage Vgs: ±30V


Maximum drain current Id: 88A


Input impedance RDS(on): 0.048Ω


Input capacitance Ciss: 7500pF (VDS=25V,VGS=0V, f=1MHz)


Output capacitance Coss: 710pF (VDS=25V,VGS=0V, f=1MHz)


Feedback capacitor Crss: 37pF (VDS=25V, VGS=0V, f=1MHz)


Junction temperature Tj: -55℃~155℃


Storage temperature Tsdg: -55℃~155℃


Package: TO247


Replace reference:


Application areas:


PDP driver

BLV88N30 Preview

Download Datasheet
BLV88N30
N-channel Enhancement Mode Power MOSFET
Preliminary
August . 2009
½导通电阻
½反向传输电容
驱动简单
BV
DSS
R
DS(ON)
I
D
300V
48mΩ
Ω
88A
产品介绍
300V 88A
大功率
VDMOS
器件,导通电阻小、驱动简单,适合
PDP
驱动电路½用
最大额定参数
(
T
C
=25
o
C
除非另有说明
)
符号
V
DS
V
GS
I
D
源漏电压
栅源电压
连续漏极电流
脉冲漏极电流
(注释 1)
½二极管连续漏极电流
I
DR
½二极管脉冲漏极电流(注释
1)
参数
极限值
300
+ 30
88
176
88
176
单½
V
V
A
A
A
A
注释:
1.
脉冲½度
PW<10us,
占空比
duty cycle<1%
http://www.belling.com.cn
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