EEWORLDEEWORLDEEWORLD

Part Number

Search

H10N60F

Description
600V 10A N-channel power MOSFET
CategoryDiscrete semiconductor   
File Size205KB,5 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

H10N60F Overview

600V 10A N-channel power MOSFET

Features

Product Name: 600V 10A N-channel Power MOSFET


N-Channel Power MOSFET (600V, 10A)


Product model: H10N60F



product features:


H10N60 is a High voltage N Channel enhancement mode power MOSFET chip fabricated in advanced silicon epitaxial planar technology


Advanced termination scheme to provide enhanced voltageblocking capability


Avalanche Energy Specified


Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;


The packaged product is widely used in AC-DC power suppliers, DCDC converters and H bridge PWM motor drivers



Applications:


Switch Mode Power Supply


Uninterruptable Power Supply


High Speed Power Switching



parameter:


Channel: N


VDSS voltage: 600V


ID Current: 10A


VGS start voltage: ±30V


RDS (on) Max. on-resistance: 1ohm


RDS(on) @VGS : 10V


RDS(on) @ID:5A


ROSH: PF (lead-free)


Package:TO-220FP


H10N60F Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200902
Issued Date : 2009.01.20
Revised Date : 2009.08.05
Page No. : 1/5
H10N60 Series
N-Channel Power MOSFET (600V,10A)
H10N60 Series
Tab
Applications
Switch Mode Power Supply
Uninterruptable Power Supply
High Speed Power Switching
1
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
2
3
Features
H10N60
is a High voltage NChannel enhancement mode power MOSFET
chip fabricated in advanced silicon epitaxial planar technology
Advanced termination scheme to provide enhanced voltageblocking capability
Avalanche Energy Specified
Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;
The packaged product is widely used in AC-DC power suppliers, DCDC converters and
Hbridge PWM motor drivers
1 2
3-Lead
TO-220FP)
Plastic Package
Package Code: F
Pin 1: Gate
Pin 2: Drain
3
Pin 3: Source
H10N60 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
Drain-Source Voltage
Continuous Drain Current (V
GS
@10V, T
C
=25 C)
Continuous Drain Current (V
GS
@10V, T
C
=100
o
C)
Pulsed Drain Current
*1
Gate-to-Source Voltage
Total Power Dissipation (T
C
=25
o
C)
P
D
Linear Derating Factor
E
AS
I
AR
E
AR
T
J
T
stg
Single Pulse Avalanche Energy
*2
Avalanche Current
*1
Repetitive Avalanche Energy
*1
Operating Junction Temperature Range
Storage Temperature Range
TO-220AB
TO-220FP
TO-220AB
TO-220FP
68
10
66
-55 to 150
-55 to 150
o
Parameter
Value
600
10
6.4
36
±30
150
50
1.25
0.4
Units
V
A
A
A
V
W
W/°C
mJ
A
mJ
°C
°C
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: Starting T
J
=25°C, L=1.2mH, R
G
=25Ω, I
AS
=10A
*3: I
SD
≤14A,
di/dt≤130A/us, V
DD
≤V
(BR)DSS
, T
J
≤150°C
Thermal Characteristics
Symbol
JC
JA
H10N60 Series
Parameter
Thermal Resistance Junction to Case (Max.)
Thermal Resistance Junction to Ambient (Max.)
Value
TO-220AB
TO-220FP
62
1.3
3.5
Units
°C/W
°C/W
HSMC Product Specification
Use pressure sensor and ADC0809 to design a pressure test system using interrupt mode
A pressure test system is designed using the pressure sensor and ADC0809 in an interrupt mode. The test results are displayed on the LED and a maximum value is defined. When the key is pressed, the ma...
蜗牛1991 51mcu
You will regret not having enough books when you need them
Making a voltage-controlled oscillator was a torture for me. I finally calculated the parameters, but the result was that the lovely square wave jumped up and down in the oscilloscope and was out of c...
daniel_yang Talking
TCPMP LINK Problem
WARNING: Unable to find a solution for this problem, please send a response. WARNING: Unable to find a solution for this problem, please send a response. WARNING: Unable to find a solution for this pr...
xtaccount Embedded System
What did Huang Zhiwei from the University of South China do during this summer vacation to prepare for the 2013 National College Student Electronic Design Competition?
[i=s]This post was last edited by paulhyde on 2014-9-15 03:17[/i]What did Huang Zhiwei of the University of South China do this summer to prepare for the 2013 National Undergraduate Electronic Design ...
黄智伟 Electronics Design Contest
Who has done fire alarm related design? Leave me an email address
My email: zhuzhou601@126.com...
zhuzhou601 MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号