MMBT3906-AU
PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
• PNP epitaxial silicon, planar design
• Collector-emitter voltage VCE = -40V
• Collector current IC = -200mA
• Acqire quality system certificate : TS16949
•
AEC-Q101 qualified
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.056(1.40)
0.047(1.20)
0.120(3.04)
0.110(2.80)
40 Volts
POWER
225 mWatts
SOT-23
Unit
：
inch(mm)
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: S2A
Top View
3
Collector
1
BASE
3
COLLECTOR
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
1
Base
2
Emitter
2
EMITTER
ABSOLUTE RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
-40
-40
-5.0
-200
Units
V
V
V
mA
THERMAL CHARACTERISTICS
PARAMETER
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
P
TOT
Rθ
JA
T
J
T
STG
Value
225
556
-55 to 150
-55 to 150
Units
mW
O
C/W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
REV.0.0-JUL.9.2008
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MMBT3906-AU
ELECTRICAL CHARACTERISTICS
PA RA M E TE R
C o lle c to r - E mi tte r B re a k d o wn
Vo lta g e
C o lle c to r - B a s e B re a k d o wn
Vo lta g e
E mi tte r - B a s e B re a k d o wn Vo lta g e
B a s e C ut o f f C ur r e nt
C o l l e c t o r C ut o f f C ur r e nt
S ym b o l
Te s t C o n d i t i o n
M IN .
-40
-40
-5 .0
-
-
60
80
100
60
30
-
-0 .6 5
-
-
-
-
-
-
-
T YP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MA X .
-
-
-
-50
-50
-
-
300
-
-
-0 .2 5
-0 .4
-0 .8 5
-0 .9 5
4 .5
10
35
35
225
75
U ni t s
V
V
V
nA
nA
V
(B R)
C E O IC = - 1 . 0 m A , IB = 0
V
(B R)
C B O IC = - 1 0 u A , IE = 0
V
(B R)
E B O IE = - 1 0 u A , IC = 0
I
B L
I
C E X
V C E =-3 0 V, V E B =-3 .0 V
V C E =-3 0 V, V E B =-3 .0 V
IC = - 0 . 1 m A , V C E = - 1 . 0 V
IC = - 1 . 0 m A , V C E = - 1 . 0 V
IC = - 1 0 m A , V C E = - 1 . 0 V
IC = - 5 0 m A , V C E = - 1 . 0 V
IC = - 1 0 0 m A , V C E = - 1 . 0 V
IC = - 1 0 m A , IB = - 1 . 0 m A
IC = - 5 0 m A , IB = - 5 . 0 m A
IC = - 1 0 m A , IB = - 1 . 0 m A
IC = - 5 0 m A , IB = - 5 . 0 m A
V C B = - 5 V , IE = 0 , f = 1 M H z
V E B = - 0 . 5 V , IC = 0 , f = 1 M H z
V
C C
=-3 V,V
BE
=-0 .5 V,
I
C
= - 1 0 m A , I
B
= - 1 . 0 m A
V
C C
=-3 V,V
BE
=-0 .5 V,
I
C
= - 1 0 m A , I
B
= - 1 . 0 m A
V C C = - 3 V , IC = - 1 0 m A
IB 1 = IB 2 = - 1 . 0 m A
V C C = - 3 V , IC = - 1 0 m A
IB 1 = IB 2 = - 1 . 0 m A
D C C ur r e nt G a i n ( N o t e 2 )
h
FE
-
C o l l e c t o r - E m i t t e r S a t ur a t i o n
Vo lta g e (No te 2 )
B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e
(No te 2 )
C o l l e c t o r - B a s e C a p a c i t a nc e
E m i t t e r - B a s e C a p a c i t a nc e
D e l a y Ti m e
R i s e Ti m e
S t o r a g e Ti m e
F a l l Ti m e
V
C E (S AT)
V
B E (S AT)
C
CBO
C
EBO
td
tr
ts
tf
V
V
pF
pF
ns
ns
ns
ns
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+3V
275
Ω
+0 .5V
0
< 1ns
300ns
-10.9V
10K
Ω
C * < 4pF
S
D elay and R ise Tim e Equivalent Test C ircuit
+3V
275
Ω
< 1ns
+9.1V
0
10 to 500us
Duty Cycle ~ 2.0%
-10.9V
10K
Ω
1N916
C * < 4pF
S
Storage and Fall Tim e Equivalent Test Circuit
REV.0.0-JUL.9.2008
PAGE . 2
Embedded System
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