PPJL9458AL
100V N-Channel Enhancement Mode MOSFET
Voltage
Features
100 V
Current
7.0 A
SOP-8
R
DS(ON) ,
V
GS
@10V, ID@7.0A<25mΩ
R
DS(ON) ,
V
GS
@4.5V, ID@5.0A<28.5mΩ
Advanced Trench Process Technology
High density cell design for ultra low on-resistance
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOP-8 package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0029 ounces, 0.083 grams
Marking: L9458AL
o
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
A
=25
o
C
Continuous Drain Current
Pulsed Drain Current
(Note 1)
T
A
=25
o
C
Power Dissipation
Single Pulse Avalanche Energy
(Note 5)
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient, t≦10s
(Note 6)
T
A
=70
o
C
T
A
=70
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
E
AS
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
V
A
A
W
mJ
o
100
+20
7.0
5.6
28
2.5
1.6
8.5
-55~150
50
o
C
C/W
July 10,2015-REV.00
Page 1
PPJL9458AL
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 7)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=1.0A, V
GS
=0V
-
-
-
0.7
7.0
1.2
A
V
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
tr
td
(off)
tf
V
DS
=50V, I
D
=7.0A,
V
GS
=10V
(Note 1,2)
V
DS
=30V, V
GS
=0V,
f=1.0MHZ
V
DD
=50V, I
D
=7.0A,
V
GS
=10V,
R
G
=3Ω
(Note 1,2)
-
-
-
-
-
-
-
-
-
-
31
5.1
7.3
1519
132
66
11
42
40
19
-
-
-
-
-
-
-
-
-
-
ns
pF
nC
BV
DSS
V
GS(th)
R
DS(on)
R
DS(on)
I
DSS
I
GSS
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V,I
D
=7.0A
V
GS
=4.5V,I
D
=5.0A
V
DS
=80V,V
GS
=0V
V
GS
=+20V,V
DS
=0V
100
1.0
-
-
-
-
-
1.8
20
22
-
-
-
2.5
25
28.5
1.0
+100
V
V
mΩ
mΩ
uA
nA
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. The maximum current rating is package limited.
4. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and duty cycles to keep initial TJ =25°C.
5. The test condition is L=0.1mH, I
AS
=13A, V
DD
=50V, V
GS
=10V
6. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. Mounted on a 1 inch
Analog electronics
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