PJP7NA80 datasheet, PDF - EEWORLD Datasheet

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PJP7NA80: Description800V N-Channel MOSFET; File Size307KB，8 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJP7NA80 Overview

800V N-Channel MOSFET

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PPJP7NA80

/ PJF7NA80

800V N-Channel MOSFET

Voltage

Features



DS(ON)

, V

@10V,I

@ 3.5A<1.55Ω



High switching speed



Improved dv/dt capability



Low Gate Charge



Low reverse transfer capacitance



Lead free in compliance with EU RoHS 2011/65/EU directive.



Green molding compound as per IEC61249 Std.

ITO-220AB-F

TO-220AB

800 V

Current

(Halogen Free)

Mechanical Data



Case: TO-220AB, ITO-220AB-F Package



Terminals : Solderable per MIL-STD-750, Method 2026



TO-220AB Approx. Weight : 0.067 ounces, 1.89 grams



ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams

Maximum Ratings and Thermal Characteristics

=25 C unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Single Pulse Avalanche Energy

(Note 1)

Power Dissipation

=25

Derate above 25

SYMBOL

154

1.23

-55~150

TO-220AB

ITO-220AB-F

UNITS

800

+30

534

0.4

Operating Junction and

Storage Temperature Range

Typical Thermal resistance

Junction to Case

Junction to Ambient

STG

θJC

θJA

0.81

62.5

2.5

120

C/W



Limited only By Maximum Junction Temperature

March 10,2014-REV.00

Page 1

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