P
BD10H150CS \ MBR10H150CT \ MBR10H150FCT \ MBR10H150DC SERIES
ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
Voltage
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
150 V
Current
10 A
TO-252
Low power loss, high efficiency.
High current capability
High junction temperature capability
Lead free in compliance with EU RoHS 2011/65/EU directive
Green molding compound as per IEC61249 Std. .(Halogen Free) (TO-252)
TO-220AB
Mechanical Data
Case: TO-252, TO-220AB, ITO-220AB, TO-263 package
Terminals: solder plated, solderable per MIL-STD-750,Method 2026
TO-252 Weight: 0.0104 ounces, 0.297 grams
TO-220AB Weight: 0.067 ounces, 1.89 grams.
ITO-220AB Weight: 0.056 ounces, 1.6 grams.
TO-263 Weight: 0.051 ounces, 1.46 grams.
Marking: Part number
TO-252
TO-220AB
150V
BD10H150CS
MBR10H150CT
ITO-220AB
TO-263
ITO-220AB MBR10H150FCT
TO-263
MBR10H150DC
Maximum Ratings And Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum rms voltage
Maximum dc blocking voltage
Maximum average forward rectified per device
current
per diode
Peak forward surge current : 8.3ms single half sine-
wave superimposed on rated load per diode
Maximum forward voltage at 5A per diode
Maximum dc reverse current
at rated dc blocking voltage
T
J
=25
o
C
T
J
=125
o
C
TO-252 (Note 1)
Typical thermal resistance
TO-220AB(Note 1)
TO-263(Note 1)
ITO-220AB(Note 1)
Operating junction temperature range
Storage temperature range
T
J
T
STG
R
θJC
SYMBOL
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
V
F
I
R
150V
150
105
150
10
5
120
0.85
0.5
1
6
3
3
7
-55 to +175
-55 to +175
o
o
o
o
UNIT
V
V
V
A
A
V
A
mA
C/W
C
C
Note : 1. Device mounted on a infinite heatsink, then measured the center of the marking side.
January 6,2015-REV.00
Page 1
P
BD10H150CS \ MBR10H150CT \ MBR10H150FCT \ MBR10H150DC SERIES
6
5
4
3
2
1
0
0
25
50
75
100
125
150
175
per diode
C
J
, Junction Capacitance (pF)
I
F
, Forward Current (A)
1000
100
10
per diode
1
1
10
100
T
C
, Case Temperature (°C)
V
R
, Reverse Bias Voltage (V)
Fig.1 Forward Current Derating Curve
1000
Fig.2 Typical Junction Capacitance
I
R
, Reverse Current (mA)
100
10
1
I
F
, Forward Current (A)
T
J
= 175°C
10
T
J
= 175°C
T
J
= 150°C
T
J
= 150°C
T
J
= 125°C
1
T
J
= 125°C
0.1
T
J
= 75°C
T
J
= 25°C
per diode
0.1
0.01
0.001
10
20
30
40
50
60
70
T
J
= 75°C
T
J
= 25°C
per diode
80
90 100
0.01
0
0.2
0.4
0.6
0.8
1
Percent of Rated Peak Reverse Voltage (%)
V
F
, Forward Voltage (V)
Fig.3 Typical Reverse Characteristics
Fig.4 Typical Forward Characteristics
January 6,2015-REV.00
Page 2
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