MT200CB20T2
Thyristor/Diode Modules
V
RRM
/ V
DRM
I
FAV
/ I
TAV
800 to 2000V
200Amp
Applications
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Features
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide
DBCceramic isolated metal baseplate
UL recognized applied for file no. E360040
Module Type
TYPE
MT200CB08T2
MT200CB12T2
MT200CB16T2
MT200CB18T2
MT200CB20T2
V
RRM/
V
DRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
◆Diode
Maximum Ratings
Symbol
I
D
I
FSM
i
2
t
Visol
Tvj
Tstg
Mt
Ms
Weight
Item
Tc=85℃
Conditions
t=10mS Tvj =45℃
a.c.50HZ;r.m.s.;1min
Values
200
6800
231200
3000
-40 to +125
-40 to +125
Units
A
A
A
2
s
V
℃
℃
Nm
Nm
g
Output Current(D.C.)
Surge forward current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
Module（Approximately）
To terminals(M6)
To heatsink(M6)
3±15%
5±15%
165
Thermal Characteristics
Symbol
Item
R
th(j-c)
Thermal Impedance, max.
Rth(c-s)
Thermal Impedance, max.
Conditions
Junction to Case
Case to Heatsink
Values
0.08
0.05
Units
℃/W
℃/W
Electrical Characteristics
Symbol
V
FM
Item
Forward Voltage Drop, max.
Repetitive Peak Reverse Current,
max.
Conditions
T=25℃ I
F
=620A
T
vj
=25℃ V
RD
=V
RRM
T
vj
=125℃ V
RD
=V
RRM
Values
Min.
Typ.
≤0.5
≤9
Max.
1.70
Units
V
mA
mA
I
RRM
Document Number:S-M0052
Rev.1.0, May.31, 2013
www.apt-semi.com
1
MT200CB20T2
◆Thyristor
Maximum Ratings
Symbol
I
TAV
I
TSM
i
2
t
Visol
Tvj
Tstg
Mt
Ms
di/dt
dv/dt
a
Item
o
Conditions
Sine 180 ;Tc=85℃
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
a.c.50HZ;r.m.s.;1min
Values
200
5500
5000
151000
125000
3000
-40 to +130
-40 to +125
Units
A
A
A2s
V
℃
℃
Nm
Nm
A/us
V/us
m/s
2
Average On-State Current
Surge On-State Current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
Critical Rate of Rise of On-State
Current
Critical Rate of Rise of Off-State
Voltage, min.
Maximum allowable acceleration
To terminals(M6)
To heatsink(M6)
T
VJ
= T
VJM
, 2/3V
DRM
,I
G
=500mA
Tr<0.5us,tp>6us
T
J
=T
VJM
,2/3V
DRM
linear voltage rise
3±15%
5±15%
200
1000
50
Thermal Characteristics
Symbol
Item
Thermal Impedance, max.
R
th(j-c)
Rth(c-s)
Thermal Impedance, max.
Conditions
Junction to Case
Case to Heatsink
Values
0.16
0.10
Units
℃/W
℃/W
Electrical Characteristics
Symbol
V
TM
I
RRM
/I
DRM
Item
Peak On-State Voltage, max.
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
On state threshold voltage
Value of on-state
slope resistance. max
Gate Trigger Voltage, max.
Gate Trigger Current, max.
Non-triggering gate voltage, max.
Non-triggering gate current, max.
Latching current, max.
Holding current, max.
Gate controlled delay time
Circuit commutated turn-off time
Conditions
T=25℃ I
T
=620A
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=
V
DRM
For power-loss
calculations only
(T
VJ
=125℃)
T
VJ
=T
VJM
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃ , V
D
=6V
T
VJ
=125℃,V
D
=2/3V
DRM
T
VJ
=125℃, V
D
=2/3V
DRM
T
VJ
=25℃ , R
G
= 33
Ω
T
VJ
=25℃ , V
D
=6V
TVJ=25℃,
IG=1A, diG/dt=1A/us
T
VJ
=T
VJM
Values
Min. Typ. Max.
1.70
40
Units
V
mA
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
tgd
tq
0.85
1.5
3
200
0.25
10
300
150
1
100
1000
400
V
mΩ
V
mA
V
mA
mA
mA
us
us
Document Number:S-M0052
Rev.1.0, May.31, 2013
www.apt-semi.com
2
MT200CB20T2
Performance Curves
300
W
sin.180
rec.120
rec.60
rec.30
300
A
240
DC
DC
200
180
sin.180
rec.120
100
120
rec.60
rec.30
60
P
TAV
0
0 I
TAV
50
100
150
A 200
I
TAVM
0
0 Tc
50
100
℃
130
Fig1. Power dissipation
0.30
℃/
W
Z
th(j-
S
)
6000
A
Fig2.Forward Current Derating Curve
50HZ
0.1
Z
th(j-
C
)
3000
0
0.001 t 0.01
0.1
1
10
S 100
0
10
100
ms 1000
Fig3. Transient thermal impedance
600
A
Typ
.
Fig4. Max Non-Repetitive Forward Surge
Current
400
125
℃
max
.
200
I
T
0
0 V
TM
0.5
1.0
25℃
- - -125℃
1.5
V 2.0
Fig5. Forward Characteristics
Document Number:S-M0052
Rev.1.0, May.31, 2013
www.apt-semi.com
3
Microcontroller MCU
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