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PJN1NA50

Description
500V N-Channel MOSFET
File Size524KB,9 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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500V N-Channel MOSFET

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PPJN1NA50
/ PJW1NA50 / PJU1NA50 / PJD1NA50
500V N-Channel MOSFET
Voltage
Features
R
DS(ON)
, V
GS
@10V,I
D
@0.5A<9Ω
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std. (Halogen Free)
TO-252
TO-251AB
TO-92
SOT-223
500 V
Current
1A
Mechanical Data
Case : TO-251AB, TO-252, SOT-223, TO-92 Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams
TO-252 Approx. Weight : 0.0104 ounces, 0.297grams
SOT-223 Approx. Weight : 0.043 ounces, 0.123grams
TO-92 Approx. Weight : 0.007 ounces, 0.196grams
o
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy
(Note 1)
Power Dissipation
T
C
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
P
D
25
0.2
1
4
42
3.3
0.026
-55~150
3
0.024
TO-251AB
TO-252
SOT-223
TO-92
UNITS
V
V
500
+30
0.3
1.2
A
A
mJ
W
W/
o
C
o
Operating Junction and
Storage Temperature Range
Typical Thermal resistance
-
-
Junction to Case
Junction to Ambient
T
J
,T
STG
C
R
θJC
R
θJA
5
110
-
37.9
(Note 4)
-
140
o
C/W
Limited only By Maximum Junction Temperature
August 07,2014-REV.01
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