DONGGUAN NANJING ELECTRONICS LTD.,
SOT-89-3L Plastic-Encapsulate Transistors
PXT2222A
TRANSISTOR (NPN)
SOT-89-3L
1.
BASE
2.
COLLECTOR
3.
EMITTER
Unit
V
V
V
mA
W
℃
℃
FEATURES
Epitaxial planar die construction
Complementary PNP Type available(PXT2907A)
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
75
40
6
600
0.5
150
-55
~150
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
DC current gain
h
FE(3)
h
FE(4)
h
FE(5)
h
FE(6)
Collector-emitter saturation voltage
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
f
T
C
ob
t
d
t
r
t
S
t
f
Test conditions
I
C
= 10μ A,I
E
=0
I
C
= 10mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
= 5V , I
C
=0
V
CE
=10V, I
C
= 0.1mA
V
CE
=10V, I
C
= 1mA
V
CE
=10V, I
C
= 10mA
V
CE
=10V, I
C
= 150mA
V
CE
=1V, I
C
= 150mA
V
CE
=10V, I
C
= 500mA
I
C
=500mA, I
B
= 50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
V
CE
=10V, I
C
=20mA
f=100MHz
V
CB
=10V, I
E
= 0,f=1MHz
V
CC
=30V, I
C
=150mA
V
BE(off)
=0.5V,I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
=- I
B2
= 15mA
0.6
300
8
10
25
225
60
35
50
75
100
50
40
1
0.3
2.0
1.2
V
V
V
V
MHz
pF
ns
ns
ns
ns
300
Min
75
40
6
0. 01
0. 01
Max
Unit
V
V
V
μA
μA
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
1
D
D,Nov
,2015
Typical Characteristics
0.25
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
1mA
900uA
h
FE
800uA
700uA
1000
h
FE
——
I
C
(A)
0.20
T
a
=100
℃
T
a
=25
℃
100
I
C
COLLECTOR CURRENT
0.15
600uA
500uA
0.10
400uA
300uA
0.05
200uA
I
B
= 100uA
0
2
4
6
8
10
12
14
16
DC CURRENT GAIN
COMMON EMITTER
V
CE
= 10V
10
1
10
100
600
0.00
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1000
V
CEsat
——
I
C
1200
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
900
T
a
=25
℃
100
600
T
a
=100
℃
T
a
=25
℃
T
a
=100
℃
10
1
10
100
β=10
600
300
1
10
100
β=10
600
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
600
I
C
——
V
BE
500
f
T
——
I
C
100
I
C
COLLECTOR CURRENT
TRANSITION FREQUENCY
f
T
T=
a
10
0
℃
10
1
(MHz)
T =2
5
℃
a
100
(mA)
COMMON EMITTER
V
CE
= 10V
0.1
0
300
600
900
1200
COMMON EMITTER
V
CE
=10V
T
a
=25
℃
10
1
10
100
BESE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
I
C
(mA)
100
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
600
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
20
500
(pF)
C
ib
CAPACITANCE
C
400
10
300
C
ob
200
100
1
0.1
1
10
0
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
2
D
D,Nov
,2015
SOT-89-3L Package Outline Dimensions
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Max
Min
1.400
1.600
0.320
0.520
0.400
0.580
0.350
0.440
4.400
4.600
1.550 REF.
2.300
2.600
3.940
4.250
1.500 TYP.
3.000 TYP.
0.900
1.200
Dimensions In Inches
Min
Max
0.055
0.063
0.013
0.020
0.016
0.023
0.014
0.017
0.173
0.181
0.061 REF.
0.091
0.102
0.155
0.167
0.060 TYP.
0.118 TYP.
0.035
0.047
SOT-89-3L Suggested Pad Layout
3
D
D,Nov
,2015
ADI Reference Circuit
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