M14D5121632A-3BBG2K datasheet, PDF

M14D5121632A-3BBG2K: DescriptionDDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-84; Categorystorage storage; File Size719KB，64 Pages; ManufacturerESMT; Websitehttp://www.esmt.com.tw/; Elite Semiconductor Memory Technology Inc. (ESMT) is a professional IC design company founded by Dr. Hu Zhao in June 1998. Its headquarters is located in Hsinchu Science Park, Taiwan. The company's main business includes research, development, manufacturing, sales and related technical services of IC products. It was listed on the Taiwan Stock Exchange in March 2002.

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M14D5121632A-3BBG2K Overview

DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, 8 X 12.50 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, BGA-84

Parameter Name	Attribute value
Objectid	1327523529
package instruction	VFBGA,
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.45 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B84
length	12.5 mm
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	84
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	32MX16
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Maximum seat height	1 mm
self refresh	YES
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	8 mm

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