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P4SMAJ43C_R1_00001

Description
Trans Voltage Suppressor Diode, 400W, 43V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size214KB,7 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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P4SMAJ43C_R1_00001 Overview

Trans Voltage Suppressor Diode, 400W, 43V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN

P4SMAJ43C_R1_00001 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
package instructionR-PDSO-C2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum breakdown voltage60.5 V
Minimum breakdown voltage47.8 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
GuidelineIEC-61000-4-2
Maximum repetitive peak reverse voltage43 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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P4SMAJ SERIES
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 400 Watts
STAND-OFF VOLTAGE
FEATURES
• Glass passivated junction
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• High temperature soldering : 260°C /10 seconds at terminals
• Lead free in comply with EU RoHS 2002/95/EC directives
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.062(1.60)
0.047(1.20)
0.114(2.90)
0.098(2.50)
0.181(4.60)
0.157(4.00)
0
.
012(0
.
305)
0
.
006(0.152)
0.008(0.203)
0.002(0.051)
0.208(5.28)
0.188(4.80)
5 to 220 Volts
• For surface mounted applications in order to optimize board space.
• Low inductance
MECHANICAL DATA
• Case: JEDEC DO-214AC,Molded plastic over passivated junction
• Terminals: Solder plated,solderable per MIL-STD-750, Method 2026
• Polarity: Color band denotes cathode end
• Standard Packaging: 12mm tape (EIA-481)
• Weight: 0.0023 ounce, 0.0679 gram
0.060(1.52)
0.030(0.76)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types P4SMAJ5.0 thru types P4SMAJ220.
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Rating
Peak Pulse Power Dissipation on T
A
= 25
O
C (Notes 1,2,5, Fig.1)
Peak Forward Surge Current per Fig.5 (Notes 3)
Peak Pulse Current on 10/1000μs waveform (Notes 1) Fig.2
Typical Thermal Resistance Junction to Air (Notes 2)
Operating Junction and Storage Temperature Range
Symbol
P
PP
I
FSM
I
PPM
R
θJA
T
J
,T
STG
Value
400
40
see Table 1
70
-55 to +150
Units
Watts
Amps
Amps
O
C/W
O
C
NOTES :
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
O
C per Fig. 2.
2. Mounted on 5mm
2
copper pads to each terminal.
3. 8.3ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minutes maximum.
4. Lead temperature at 75
O
C = T
L
.
5. Peak pulse power waveform is 10/1000
μ
s
.
s
6. A transient suppressor is selected according to the working peak reverse voltage (V
RWM
), which should be equal to or
greater than the DC or continuous peak operating voltage level.
October 25,2012-REV.07
PAGE . 1
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