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HJ3669

Description
80V 2A NPN epitaxial planar transistor
CategoryDiscrete semiconductor   
File Size46KB,4 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

HJ3669 Overview

80V 2A NPN epitaxial planar transistor

Features

Product Name: 80V 2A NPN Epitaxial Planar Transistor


Product model: HJ3669


Product Description:


The HJ3669 is designed for using in power amplifier applications, power switching application.



parameter:


Type: NPN


BVCEO: 80V


IC: 2A


PD: 1.25W


hFE: MIN 300


hFE: Max. -


VCE(sat): Max. 0.5V


RoHS: PF(lead-free)


Package: TO-252


HJ3669 Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6029
Issued Date : 1997.10.24
Revised Date : 2005.07.14
Page No. : 1/4
HJ3669
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HJ3669 is designed for using in power amplifier applications, power switching
application.
TO-252
Absolute Maximum Ratings
(T
A
=25°C)
Maximum Temperatures
Tstg Storage Temperature.................................................................................................................... -55 ~ +150
°C
Tj Junction Temperature ................................................................................................................................ +150
°C
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C) ................................................................................................................. 1.25 W
Maximum Voltages and Currents
BV
CBO
Collector to Base Breakdown Voltage ...................................................................................................... 80 V
BV
CEO
Collector to Emitter Breakdown Voltage................................................................................................... 80 V
BV
EBO
Emitter to Base Emitter Breakdown Voltage .............................................................................................. 5 V
I
C
Collector Current (DC) ....................................................................................................................................... 2 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
f
T
Cob
T
on
T
stg
T
f
Min.
80
80
5
-
-
-
-
300
-
-
-
-
-
Typ.
-
-
-
-
-
0.15
0.9
-
100
30
0.2
1.0
0.2
Max.
-
-
-
1000
1000
0.5
1.2
-
-
-
-
-
-
MHz
pF
uS
uS
uS
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Unit
V
V
V
nA
nA
V
V
I
C
=100uA
I
C
=10mA
I
E
=100uA
V
CB
=80V
V
EB
=5V
Test Conditions
I
C
=1A, I
B
=50mA
I
C
=1A, I
B
=50mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=500mA
V
CB
=10V, f=1MHz
I
B1
=-I
B2
=50mA
Duty Cycle≤1%
HJ3669
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