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FR302

Description
3.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS 3.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS
CategoryDiscrete semiconductor    diode   
File Size717KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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FR302 Overview

3.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS 3.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS

Features

Product Name: 3.0A FAST RECOVERY SURFACE MOUNT RECTIFIERS


Product model: FR302


product features:


Low forward voltage drop


High current capability


High reliability


High surge current capability



Mechanical data:


Cases:Molded plastic



Epoxy:UL 94V-0 rate flame retardant



Lead:Axial leads,solderable per MIL-STD-202, Method 208 guaranteed



Polarity:Color band denotes cathode end



High temperature soldering guaranteed;


250?C /10 seconds/.375”,(9.5mm)lead


Lengths at 5 lbs.,(2.3kg) tension



Weight: 1.2 grams



Maximum Ratings and Electrical Characteristics:


Rating at 25℃ ambient temperature unless otherwise specified.


Single phase, half wave, 60 Hz, resistive or inductive load.


For capacitive load, derate current by 20%



product data:


Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 100V



Maximum RMS Voltage VRMS Voltage effective value: 70V



Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 100V



Maximum Average Forward Rectified Current .375”(9.5mm) Lead length @TA=55℃ IF(AV) Maximum forward current: 3.0 A



Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 150 A



Maximum Instantaneous Forward Voltage @ 3.0A VF Maximum forward voltage drop: 1.2 V



Maximum Reverse Current at Rated @TA=25℃ IR Maximum reverse leakage current: 10μA


DC blocking voltage @TA= 100℃ IR Maximum reverse leakage current: 150μA



Maximun Reverse Recovery Time TRR :150 nS



Typical Thermal Resistance (Note) RθJA Thermal resistance coefficient: 40 ℃/W



Operating Temperature Range TJ Operating Junction Temperature: -65 to +150 ℃



Storage Temperature Range TSTG Storage Temperature Range: -65 to +150 ℃



Package: DO-201AD


FR302 Parametric

Parameter NameAttribute value
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codecompliant
Other featuresHIGH RELIABILITY
applicationFAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage100 V
Maximum reverse current10 µA
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
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