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2SJ529L-E.

Among 2 related components, 2SJ529L-E. have related pdf.
Part Number Manufacturer Description Datasheet
2SJ529L-E Renata SA silicon P channel mos fet Download
2SJ529L-E Renesas Electronics Corporation Pch Single Power MOSFET -60V -10A 160mohm DPAK(L)-(2)/TO-251 Download
2SJ529L-E. parameters:

Description

Pch Single Power MOSFET -60V -10A 160mohm DPAK(L)-(2)/TO-251

Parametric
Parameter NameAttribute value
Brand NameRenesas
Is it Rohs certified?conform to
MakerRenesas(瑞萨电子)
Parts packaging codeDPAK(L)-(2)
package instructionIN-LINE, R-PSIP-T3
Contacts4
Manufacturer packaging codePRSS0004ZD-B4
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys Confidence3
Samacsys StatusReleased
Samacsys PartID532752
Samacsys Pin Count3
Samacsys Part CategoryIntegrated Circuit
Samacsys Package CategoryTransistor Outline, Vertical
Samacsys Footprint NamePRSS0004ZD-B
Samacsys Released Date2020-01-28 11:25:15
Is SamacsysN
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)10 A
Maximum drain current (ID)10 A
Maximum drain-source on-resistance0.24 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)20 W
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN BISMUTH
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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