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PH3230S..

Among 6 related components, PH3230S.. have related pdf.
Part Number Manufacturer Description Datasheet
PH3230S Philips Semiconductors (NXP Semiconductors N.V.) N-channel TrenchMOS⑩ logic level FET Download
PH3230S Nexperia Power Field-Effect Transistor Download
PH3230S NXP N-channel TrenchMOS⑩ logic level FET Download
PH3230S115 NXP MOSFET N-CH TRENCH 30V Download
PH3230S,115 Nexperia PH3230S - N-channel TrenchMOS intermediate level FET SOIC 4-Pin Download
PH3230S,115 NXP mosfet N-CH 30v 100a lfpak Download
PH3230S.. parameters:

Description

Power Field-Effect Transistor

Parametric
Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionLFPAK-4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)250 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)100 A
Maximum drain-source on-resistance0.0065 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMO-235
JESD-30 codeR-PSSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)300 A
GuidelineIEC-60134
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

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