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FLL1200IU-2

Description
L-Band Medium & High Power GaAs FET
CategoryDiscrete semiconductor    The transistor   
File Size81KB,4 Pages
ManufacturerFUJITSU
Websitehttp://edevice.fujitsu.com/fmd/en/index.html
Download Datasheet Parametric View All

FLL1200IU-2 Overview

L-Band Medium & High Power GaAs FET

FLL1200IU-2 Parametric

Parameter NameAttribute value
MakerFUJITSU
package instructionFLANGE MOUNT, R-CDFM-F4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage15 V
FET technologyJUNCTION
highest frequency bandL BAND
JESD-30 codeR-CDFM-F4
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment150 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Base Number Matches1
FLL1200IU-2
L-Band Medium & High Power GaAs FET
FEATURES
Push-Pull Configuration
High Power Output: 120W (Typ.)
High PAE: 44%.
Broad Frequency Range: 1800 to 2000 MHz.
Suitable for class AB operation.
DESCRIPTION
The FLL1200IU-2 is a 120 Watt GaAs FET that employs a push-pull design that
offers ease of matching, greater consistency and a broader bandwidth for high
power L-band amplifiers. This product is targeted to reduce the size and
complexity of highly linear, high power base station transmitting amplifiers.
This new product is uniquely suited for use in PCS/PCN base station amplifiers
as it offers high gain, long term reliability and ease of use.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Tc = 25°C
Condition
Rating
15
-5
187.5
-65 to +175
+175
Unit
V
V
W
°C
°C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 156.0 and -57.6 mA respectively with
gate resistance of 10Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power
Linear Gain
Drain Current
Power-Added Efficiency
Thermal Resistance
CASE STYLE: IU
Symbol
I
DSS
gm
V
p
V
GSO
P
out
GL
I
DSR
η
add
R
th
Conditions
V
DS
= 5V, V
GS
= 0V
V
DS
= 5V, I
DS
= 28.8A
V
DS
= 5V, I
DS
= 2.88A
I
GS
= -2.88mA
V
DS
= 12V
f=1.96 GHz
I
DS
= 5.0A
Pin = 41.0dBm
Channel to Case
Limits
Min. Typ. Max.
-
-
-1.0
-5
49.8
10.0
-
-
-
48
24
-2.0
-
50.8
11.0
20
44
0.6
72
-
-3.5
-
-
-
30
-
0.8
Unit
A
S
V
V
dBm
dB
A
%
°C/W
Edition 1.7
December 1999
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