FMG1G100US60L
IGBT
FMG1G100US60L
Molding Type Module
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power
modules provide low conduction and switching losses as
well as short circuit ruggedness. They are designed for
applications such as motor control, uninterrupted power
supplies (UPS) and general inverters where short circuit
ruggedness is a required feature.
Features
•
•
•
•
•
•
UL Certified No. E209204
Short Circuit rated 10us @ T
C
= 100°C, V
GE
= 15V
High Speed Switching
Low Saturation Voltage : V
CE(sat)
= 2.2 V @ I
C
= 100A
High Input Impedance
Fast & Soft Anti-Parallel FWD
Package Code : 7PM-GA
E1/C2
Application
•
•
•
•
•
AC & DC Motor Controls
General Purpose Inverters
Robotics
Servo Controls
UPS
C1
E2
G2
E2
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
T
SC
P
D
T
J
T
stg
V
iso
Mounting
Torque
T
C
= 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Power Terminals Screw : M5
Mounting Screw : M5
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ AC 1minute
FMG1G100US60L
600
±
20
100
200
100
200
10
400
-40 to +150
-40 to +125
2500
2.0
2.0
Units
V
V
A
A
A
A
us
W
°C
°C
V
N.m
N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
©2002 Fairchild Semiconductor Corporation
FMG1G100US60L Rev. A
FMG1G100US60L
Electrical Characteristics of IGBT
T
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
CES
∆B
VCES
/
∆T
J
I
CES
I
GES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V
GE
= 0V, I
C
= 250uA
V
GE
= 0V, I
C
= 1mA
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
600
--
--
--
--
0.6
--
--
--
--
250
±
100
V
V/°C
uA
nA
On Characteristics
V
GE(th)
V
CE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
V
GE
= 0V, I
C
=100mA
I
C
= 100A
,
V
GE
= 15V
5.0
--
6.0
2.2
8.5
2.8
V
V
Dynamic Characteristics
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 30V
,
V
GE
= 0V,
f = 1MHz
--
--
--
10840
963
228
--
--
--
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
sc
Q
g
Q
ge
Q
gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
--
--
--
--
--
--
--
--
--
--
--
--
--
--
10
--
--
--
25
50
80
110
1.6
2.4
4.0
25
60
80
240
1.7
4.3
6.0
--
425
80
200
--
--
--
200
--
--
--
--
--
--
--
--
--
--
--
500
--
--
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
us
nC
nC
nC
V
CC
= 300 V, I
C
= 100A,
R
G
= 2.4Ω, V
GE
= 15V
Inductive Load, T
C
= 25°C
V
CC
= 300 V, I
C
= 100A,
R
G
= 2.4Ω, V
GE
= 15V
Inductive Load, T
C
= 125°C
@
T
C
V
CC
= 300 V, V
GE
= 15V
= 100°C
V
CE
= 300 V, I
C
= 100A,
V
GE
= 15V
©2002 Fairchild Semiconductor Corporation
FMG1G100US60L Rev. A
FMG1G100US60L
Electrical Characteristics of DIODE
T
Symbol
V
FM
t
rr
I
rr
Q
rr
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
C
= 25°C unless otherwise noted
Test Conditions
T
C
= 25°C
I
F
= 100A
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
I
F
= 100A
di / dt = 200 A/us
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
1.9
1.8
90
130
9
12
405
780
Max.
2.8
--
130
--
12
--
790
--
Units
V
ns
A
nC
Thermal Characteristics
Symbol
R
θJC
R
θJC
R
θCS
Weight
Parameter
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink
(Conductive grease applied)
Weight of Module
Typ.
--
--
0.05
--
Max.
0.31
0.7
--
190
Units
°C/W
°C/W
°C/W
g
©2002 Fairchild Semiconductor Corporation
FMG1G100US60L Rev. A
FMG1G100US60L
240
210
250
Common Emitter 20V
T
C
= 25℃
15V
12V
Collector Current, I
C
[A]
180
150
V
GE
= 10V
120
90
60
Collector Current, I
C
[A]
200
Common Emitter
V
GE
= 15V
T
C
= 25℃
T
C
= 125℃
150
100
50
30
0
0
2
4
6
8
0
0.3
1
10
20
Collector - Emitter Voltage, V
CE
[V]
Collector - Emitter Voltage, V
CE
[V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
120
Common Emitter
V
GE
= 15V
V
CC
= 300V
Load Current : peak of square wave
Collector - Emitter Voltage, V
CE
[V]
4
100
200A
Load Current [A]
80
3
100A
2
I
C
= 50A
60
40
1
20
0
0
50
100
150
0
Duty cycle : 50%
T
C
= 100℃
Power Dissipation = 130W
0.1
1
10
100
1000
Case Temperature, T
C
[
℃
]
Frequency [Khz]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20
Common Emitter
T
C
= 25℃
20
Common Emitter
T
C
= 125℃
Collector - Emitter Voltage, V
CE
[V]
16
Collector - Emitter Voltage, V
CE
[V]
16
12
12
8
200A
4
I
C
= 50A
0
0
4
8
12
16
20
100A
8
200A
4
I
C
= 50A
0
0
4
8
12
16
20
100A
Gate - Emitter Voltage, V
GE
[V]
Gate - Emitter Voltage, V
GE
[V]
Fig 5. Saturation Voltage vs. V
GE
©2002 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. V
GE
FMG1G100US60L Rev. A
FMG1G100US60L
30000
25000
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25℃
Cies
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 100A
1000
T
C
= 25 C
T
C
= 125 C
0
0
Capacitance [pF]
20000
Switching Time [ns]
Ton
Tr
15000
100
10000
Coes
5000
Cres
0
0.5
10
1
10
30
1
10
Collector - Emitter Voltage, V
CE
[V]
Gate Resistance, R
G
[
Ω
]
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
3000
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 100A
T
C
= 25℃
T
C
= 125℃
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 100A
Toff
T
C
= 25 C
T
C
= 125 C
0
0
Switching Time [ns]
1000
Switching Loss [uJ]
10000
Eon
Eoff
Tf
Tf
100
1000
50
6
10
100
1
10
Gate Resistance, R
G
[
Ω
]
Gate Resistance, R
G
[
Ω
]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
R
G
= 2.4
Ω
T
C
= 25 C
T
C
= 125 C
0
0
Common Emitter
V
CC
= 300V, V
GE
= +/- 15V
I
C
= 100A
T
C
= 25 C
T
C
= 125 C
0
0
Switching Time [ns]
1000
100
Ton
Switching Time [ns]
Toff
Tf
Tr
100
Tf
10
20
40
60
80
100
120
140
1
10
Gate Resistance, R
g
[
Ω
]
Collector Current, I
C
[A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMG1G100US60L Rev. A
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