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FMJ-2203

Description
20 A, SILICON, RECTIFIER DIODE, TO-220AB
CategoryDiscrete semiconductor    diode   
File Size128KB,4 Pages
ManufacturerSANKEN
Websitehttp://www.sanken-ele.co.jp/en/
Download Datasheet Parametric View All

FMJ-2203 Overview

20 A, SILICON, RECTIFIER DIODE, TO-220AB

FMJ-2203 Parametric

Parameter NameAttribute value
Parts packaging codeTO-220AB
package instructionR-PSFM-T3
Contacts3
Reach Compliance Codeunknow
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
SANKEN ELECTRIC CO., LTD.
FMJ-2303
1 適用範囲
Scope
この規格は、FMJ-2303 について適用する。
The present specifications shall apply to Sanken silicon diode, FMJ-2303.
2 概要
Outline
Type
Structure
主 用 途
Applications
ショットキーバリアダイオード
Silicon Schottky Barrier Diode
樹脂封止型
不燃化度:規格
UL94V - 0
相½品
Resin Molded
Flammability : UL94V-0 (Equivalent)
高周波整流
High Frequency Rectification
3 絶対最大定格
Absolute maximum ratings
No.
1
2
3
4
5
6
7
8
Item
記号
Symbol
単½
Unit
30
30
30
150
Rating
Conditions
ピーク非繰返し逆電圧
Transient Peak Reverse Voltage
V
RSM
V
RM
I
F(AV)
I
FSM
I
2
t
T
j
T
stg
V
V
A
A
A
2
s
ピーク繰返し逆電圧
Peak Reverse Voltage
平均順電流
Average Forward Current
サージ順電流
Peak Surge Forward Current
減定格
6
項参照
Refer to Derating of 6
10msec.正弦半波単発
Half sinewave, one shot
I
2
t
限界値
I t Limiting Value
2
112.5
-40∼+150
-40∼+150
A. C. 1. 0
リードケース間(1 分間)
Junction to case (1minute)
接合部温度
Junction Temperature
保存温度
Storage Temperature
絶縁耐圧
kV
Dielectric Strength
No.1,2,4,5
は一素子½たりの定格を示す。
No.1,2,4&5 show ratings per one chip.
4 電気的特性
(特に指定の無い場合は、25℃とする。)
Electrical characteristics (Ta=25℃, unless otherwise specified)
No.
1
2
3
4
Item
記号
Symbol
単½
Unit
I
F
=15A
V
R
=V
RM
Value
Conditions
順方向降下電圧
Forward Voltage Drop
逆方向漏れ電流
Reverse Leakage Current
V
F
I
R
H½I
R
R
th(j-c)
V
mA
mA
℃/W
0.48 max.
15 max.
500 max.
4.0 max.
高温逆方向漏れ電流
Reverse Leakage Current Under
High Temperature
V
R
=V
RM
, T
j
=150℃
接合部−裏面取付け穴周辺部
Between Junction and case
熱抵抗
Thermal Resistance
No.1,2,3
は一素子½たりの特性を示す。
No.1,2,&3 show characteristics per one chip.
040909
1/4
61426-01

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