FMMT2222
FMMT2222A
SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS
UNIT
C
B
CONDITIONS.
FMMT2222
FMMT2222A
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
MHz
pF
pF
ns
ns
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
+30V
PARAMETER
SYMBOL
f
T
8
25
10
25
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
225
60
ns
ns
FMMT2222
MIN. MAX.
250
FMMT2222A
MIN. MAX.
300
Transition
Frequency
Output Capacitance
C
obo
8
Input Capacitance
C
ibo
30
ISSUE 3 FEBRUARY 1996
FEATURES
* Fast switching
PARTMARKING DETAILS
FMMT2222
1BZ
FMMT2222A 1P
FMMT2222R
2P
FMMT2222AR 3P
COMPLEMENTARY TYPES
FMMT2222
FMMT2907
FMMT2222A FMMT2907A
Delay Time
Rise Time
t
d
t
r
10
25
ABSOLUTE MAXIMUM RATINGS.
FMMT2222
60
30
5
600
330
-55 to +150
FMMT2222A
75
40
6
UNIT
V
V
V
mA
mW
°C
Storage Time
Fall Time
t
s
t
f
225
60
I
C
=20mA, V
CE
=20V
f=100MHz
V
CB
=10V, I
E
=0,
f=140KHz
V
EB
=0.5V, I
C
=0
f=140KHz
V
CC
=30V, V
BE(off)
=0.5V
I
C
=150mA, I
B1
=15mA
(See Delay Test Circuit)
V
CC
=30V, I
C
=150mA
I
B1
= I
B2
=15mA
(See Storage Test
Circuit)
DELAY AND RISE TEST CIRCUIT
Operating and Storage Temperature Range T
j
:T
stg
PARAMETER
SYMBOL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
200
Ω
Generator rise time <2ns
Pulse width (t
1
)<200ns
Duty cycle = 2%
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
60
75
V
I
C
=10
µ
A, I
E
=0
9.9V
619
Ω
30
5
10
10
I
EBO
I
CEX
V
CE(sat)
V
BE(sat)
h
FE
0.6
10
10
40
6
10
10
10
10
V
V
µ
A
I
C
=10mA, I
B
=0
I
E
=10
µ
A, I
C
=0
nA
nA
µ
A
nA
nA
V
CB
=50V, I
E
=0
V
CB
=60V, I
E
=0
V
CB
=50V, I
E
=0, T
amb
=150°C
V
CB
=60V, I
E
=0, T
amb
=150°C
V
EB
=3V, I
C
=0
V
CE
=60V, V
EB(off)
=3V
0
0.5V
Scope:
R
in
> 100 k
Ω
C
in
< 12 pF
Rise Time < 5 ns
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
STORAGE TIME AND FALL TIME TEST CIRCUIT
+30V
=100
µ
s
<5ns
+16.2 V
Ω
0.3
1.0
2.0
2.6
0.6
0.3
1.0
1.2
2.0
V
V
V
V
0
1K
Ω
Emitter Cut-Off
Current
Collector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio
in
-13.8 V
-3V
1N916
in
Scope:
R > 100 kΩ
C < 12 pF
Rise Time < 5 ns
35
50
75
35
100
50
30
300
35
50
75
35
100
50
40
300
=500
µ
s
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
I
C
=0.1mA, V
CE
=10V*
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V, T
amb
=-55°C
I
C
=150mA, V
CE
=10V*
I
C
=150mA, V
CE
=1V*
I
C
=500mA, V
CE
=10V*
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
Duty cycle = 2%
FMMT2222
FMMT2222A
SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTORS
UNIT
C
B
CONDITIONS.
FMMT2222
FMMT2222A
E
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
MHz
pF
pF
ns
ns
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
+30V
PARAMETER
SYMBOL
f
T
8
25
10
25
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
225
60
ns
ns
FMMT2222
MIN. MAX.
250
FMMT2222A
MIN. MAX.
300
Transition
Frequency
Output Capacitance
C
obo
8
Input Capacitance
C
ibo
30
ISSUE 3 FEBRUARY 1996
FEATURES
* Fast switching
PARTMARKING DETAILS
FMMT2222
1BZ
FMMT2222A 1P
FMMT2222R
2P
FMMT2222AR 3P
COMPLEMENTARY TYPES
FMMT2222
FMMT2907
FMMT2222A FMMT2907A
Delay Time
Rise Time
t
d
t
r
10
25
ABSOLUTE MAXIMUM RATINGS.
FMMT2222
60
30
5
600
330
-55 to +150
FMMT2222A
75
40
6
UNIT
V
V
V
mA
mW
°C
Storage Time
Fall Time
t
s
t
f
225
60
I
C
=20mA, V
CE
=20V
f=100MHz
V
CB
=10V, I
E
=0,
f=140KHz
V
EB
=0.5V, I
C
=0
f=140KHz
V
CC
=30V, V
BE(off)
=0.5V
I
C
=150mA, I
B1
=15mA
(See Delay Test Circuit)
V
CC
=30V, I
C
=150mA
I
B1
= I
B2
=15mA
(See Storage Test
Circuit)
DELAY AND RISE TEST CIRCUIT
Operating and Storage Temperature Range T
j
:T
stg
PARAMETER
SYMBOL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
200
Ω
Generator rise time <2ns
Pulse width (t
1
)<200ns
Duty cycle = 2%
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
FMMT2222 FMMT2222A UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
60
75
V
I
C
=10
µ
A, I
E
=0
9.9V
619
Ω
30
5
10
10
I
EBO
I
CEX
V
CE(sat)
V
BE(sat)
h
FE
0.6
10
10
40
6
10
10
10
10
V
V
µ
A
I
C
=10mA, I
B
=0
I
E
=10
µ
A, I
C
=0
nA
nA
µ
A
nA
nA
V
CB
=50V, I
E
=0
V
CB
=60V, I
E
=0
V
CB
=50V, I
E
=0, T
amb
=150°C
V
CB
=60V, I
E
=0, T
amb
=150°C
V
EB
=3V, I
C
=0
V
CE
=60V, V
EB(off)
=3V
0
0.5V
Scope:
R
in
> 100 k
Ω
C
in
< 12 pF
Rise Time < 5 ns
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
STORAGE TIME AND FALL TIME TEST CIRCUIT
+30V
=100
µ
s
<5ns
+16.2 V
Ω
0.3
1.0
2.0
2.6
0.6
0.3
1.0
1.2
2.0
V
V
V
V
0
1K
Ω
Emitter Cut-Off
Current
Collector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer
Ratio
in
-13.8 V
-3V
1N916
in
Scope:
R > 100 kΩ
C < 12 pF
Rise Time < 5 ns
35
50
75
35
100
50
30
300
35
50
75
35
100
50
40
300
=500
µ
s
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
I
C
=0.1mA, V
CE
=10V*
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V, T
amb
=-55°C
I
C
=150mA, V
CE
=10V*
I
C
=150mA, V
CE
=1V*
I
C
=500mA, V
CE
=10V*
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
Duty cycle = 2%
ADI Reference Circuit
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