SOT23 NPN SILICON PLANAR
SWITCHING TRANSISTOR
FMMT4123
E
ISSUE 2 MARCH 94
7
ZB
C
PARTMARKING DETAIL
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
(BR)CBO
MIN.
40
I
C
P
tot
T
j
:T
stg
MAX.
UNIT
V
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
obo
C
ibo
N
Small Signal Current
Transfer
h
fe
50
25
250
30
5
50
50
0.3
0.95
150
4
8
6
50
200
MHz
pF
pF
dB
V
V
nA
nA
V
V
V
CEO
V
EBO
V
CBO
SYMBOL
VALUE
40
30
5
200
330
-55 to +150
CONDITIONS.
I
C
=10
µ
A
I
C
=1mA*
I
E
=10
µ
A
V
CB
=20V
VEB=3V
I
C
=50mA, I
B
=5mA*
IC=50mA, I
B
=5mA*
I
C
=2mA, V
CE
=1V*
I
C
=50mA, V
CE
=1V*
I
C
=10mA, V
CE
=20V, f=100MHz
V
CB
=5V, I
E
=0, f=140KHz
V
BE
=0.5V, I
E
=0, f=140KHz
I
C
=200
µ
A, V
CE
=5V, R
g
=2k
Ω
f=30Hz to 15KHz at 3dB points
I
C
=2mA, V
CE
=1V, f=1KHz
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
SaturationVoltage
Static Forward
Current Transfer Ratio
Transistion Frequency
Output Capacitance
Input Capacitance
Noise Figure
SWITCHING CHARACTERISTICS (at T
amb
= 25°C).
UNIT
CONDITIONS
V
CC
=3V, V
BE(off)
=0.5V
I
C
=10mA, I
B1
=1mA
ns
ns
ns
ns
V
CC
=3V, I
C
=10mA
I
B1
=I
B2
=1mA
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
PARAMETER
Delay Time
Rise Time
Storage Time
Fall Time
SYMBOL
t
d
t
r
t
s
t
f
TYP.
24
13
125
11
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