FMMT451 datasheet, PDF - EEWORLD Datasheet

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FMMT451: DescriptionNPN SILICON PLANAR HIGH PERFROMANCE TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size113KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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FMMT451 Overview

NPN SILICON PLANAR HIGH PERFROMANCE TRANSISTOR

FMMT451 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-based maximum capacity	15 pF
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	10
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.425 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	0.35 V

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FMMT451

SOT23 NPN SILICON PLANAR

HIGH PERFROMANCE TRANSISTOR

FMMT451

TYPICAL CHARACTERISTICS

/10

=10V

tf,tr,td

0.8

ISSUE 3 - OCTOBER 1995

FEATURES

* Low equivalent on-resistance;

CE(sat)

400mΩ at 1A

* 1 Amp continuous current

* P

tot

= 500 mW

150

0.6

800

=10

- (Volts)

100

COMPLEMENTARY TYPE

PARTMARKING DETAIL

FMMT551

451

0.4

600

0.1

200

400

Switching time

0.2

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

CEO

EBO

tot

stg

CBO

SYMBOL

VALUE

200

500

-55 to +150

UNIT

°C

0.001

0.01

0.1

0.01

Collector Current (Amps)

CE(sat)

v I

Switching Speeds

200

1.8

1.6

=10

160

1.4

Operating and Storage Temperature Range

=2V

1.2

120

1.0

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

0.001

0.01

0.1

0.8

- (Volts)

SYMBOL

(BR)CBO

CEO(sus)

CBO

MIN. MAX.

UNIT

0.1

CONDITIONS.

=100

=10mA*

=100

=60V

0.6

0.4

0.2

0.001

0.01

0.1

Collector-Emitter

Sustaining Voltage

Collector Current (Amps)

v I

Single Pulse Test at Tamb=25°C

BE(sat)

v I

Emitter-Base Breakdown V

(BR)EBO

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

Transition

Frequency

EBO

CE(sat)

BE(sat)

1.8

0.1

0.35

1.1

150

=4V

=150mA, I

=15mA*

=150mA, I

=15mA*

1.6

1.4

1.2

=2V

- (Volts)

1.0

0.8

0.6

0.1

0.4

100ms

10ms

1ms

100

=150mA, V

=10V*

=1A, V

=10V*

MHz

=50mA, V

=10V

f=100MHz

0.2

0.01

0.1

0.001

0.01

0.1

100

Collector Current (Amps)

- Collector Emitter Voltage (V)

Output Capacitance

obo

=10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

s. Duty cycle

≤

BE(on)

v I

Safe Operating Area

3 - 109

3 - 108

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