P
R O D U C T
Semiconductor Solutions for
High Speed Communication
and Fiber Optic Applications
The FOA11002A1 is the industry's lowest power
consuming STM64/OC-192 Transimpedance Amplifier
for SDH/SONET systems in Silicon Germanium technol-
ogy. This new device is a key component for future high
speed optical communication systems for regional, met-
ropolitan and backbone transport data networks at the
highest speeds up to 10.7 Gbit/s over one single fiber.
It is a member of the complete 10 Gbit/s chipset in the
Silicon Germanium technology.
B
R I E F
Features
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Typical Applications
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Input sensitivity: -18.0 dBm
electrical at BER = 10
-12
Transimpedance: 6 k
Ω
Overload: 0 dBm electrical
Single power supply: +5 V
Low power consumption:
170 mW
Internal DC compensation
loop increases dynamic
range
Internal bias generation for
PIN photo diode including
low-pass filter
Operates with PIN photo
diode or APD
Monitor output for mirrored
photodiode current
Fiber optics telecom and
datacom applications
SONET/SDH OC-192/STM-64
with and without FEC
Preamplifier modules
Optical receiver modules
FOA11002A1
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Main Advantages
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Packing
Type
TIA
Sales Code
FOA11002A
Data rate from 9.95 Gbit to
10.7 Gbit/s up to 10.7 Gbit/s
Input sensitivity:
- 18.0 dBm at BER = 10
-12
Transimpedance: 6 k
Ω
High overload: 1.5 mA pp
maximum input current
Single power supply: +5 V
Low power consumption:
170 mW
Internal DC compensation
loop increases dynamic
range
Package
Bare die
Internal bias generation for
PIN photo diode including
low-pass filter
Operates with PIN photo
diode or APD
Monitor output for mirrored
photodiode current
Few external components
necessary
Small chip size of
0.97 x 0.97 mm
(available as bare die)
F O A 1 1 0 0 2 A 1
Tra nsi m p e d a n ce A m pl i f i e r
T I A 9 .9 5 - 1 0 . 7 G b i t / s , 5 . 0 V
N e v e r
s t o p
t h i n k i n g .
P
R O D U C T
B
R I E F
R
BIAS
FIL
CAP
FOA11002A1
Block Diagram
V
CC
F OA 11 0 0 2A 1
60
Ω
60
Ω
V
CC
GND
QH
QL
DC
Compensation
IN
V
REF
MONI
+5 V
1 kΩ
FIL
V
CC
Mirrored Photo Diode Current
MONI
QH
QL
30 nF
DataOUT+
30 nF
DataOUT-
50
Ω
GND
CAP
560 pF
Application Example
F O A 11 0 0 2 A
IN
50
Ω
Data
Processing
MUX+CMU
FOA41001B1
Laser Driver
FOA21002A1
Laser
1)
10 Gbit/s
Chipset Overview
Framer/
Mapper
FOAxxxx
One Chip
Transceiver
FOA6100xB1
DEMUX+CDR
FOA51001B1
CDR
FOA31002B1
Optional Serial CDR
TIA
FOA11002A1
PIN
1)
How to reach us:
http://www.infineon.com
Published by
Infineon Technologies AG,
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81541 München
© Infineon Technologies AG 2002. All Rights Reserved.
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For further information on technology, delivery terms and
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Infineon Technologies Office in Germany or our
Infineon Technologies Representatives worldwide.
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Due to technical requirements components may contain dan-
gerous substances. For information on the types in question
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Ordering No. B168-H7712-G1-X-7600
Printed in Germany
PS 1201.5
NB
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