FP203 datasheet, PDF - EEWORLD Datasheet

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FP203: Description1 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT; CategoryDiscrete semiconductor The transistor; File Size133KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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FP203 Overview

1 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, PRESS FIT

FP203 Parametric

Parameter Name	Attribute value
Maker	SANYO
package instruction	SMALL OUTLINE, R-PSSO-G3
Contacts	7
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	50 V
Configuration	COMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE)	140
JESD-30 code	R-PSSO-G3
Number of components	2
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN AND PNP
Maximum power consumption environment	1 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	0.25 V

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Ordering number:EN4496

FP203

PNP/NPN Epitaxial Planar Silicon Transistors

Push-Pull Circuits

Features

· Composite type with 2 transistors of PNP transistor

and NPN transistor,facilitating high-density mount-

ing.

· The FP203 is formed with chips, being equivalent to

the 2SB1122 and 2SD1622, placed in one package.

Electrical Connection

1:Base (PNP TR)

2:Collector (PNP TR)

3:Emitter Common

4:Collector (NPN TR)

5:Base (NPN TR)

6:Collector (NPN TR)

7:Collector (PNP TR)

(Top view)

Package Dimensions

unit:mm

2097A

[FP203]

1:Base (PNP TR)

2:Collector (PNP TR)

3:Emitter Common

4:Collector (NPN TR)

5:Base (NPN TR)

6:Collector (NPN TR)

7:Collector (PNP TR)

SANYO:PCP5

(Bottom view)

( ) : PNP

Conditions

Ratings

(–)60

(–)50

(–)5

(–)1

(–)2

(–)0.2

Unit

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Current (Pulse)

Base Current

Collector Dissipation

Total Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

ICP

Tstg

Mounted on ceramic board (250mm

×0.8mm)

1unit

0.75

1.0

150

–55 to +150

Mounted on ceramic board (250mm

×0.8mm)

˚C

Electrical Characteristics

at Ta=25˚C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Output Capacitance

C-E Saturation Voltage

B-E Saturation Voltage

C-B Breakdown Voltage

C-E Breakdown Voltage

E-B Breakdown Voltage

Turn-ON Time

Storage Time

Fall Time

Symbol

ICBO

IEBO

hFE

Cob

VCE(sat)

VBE(sat)

VCB=(–)50V, IE=0

VEB=(–)4V, IC=0

VCE=(–)2V, IC=(–)100mA

VCE=(–)10V, IC=(–)50mA

VCB=(–)10V, f=1MHz

IC=(–)500mA, IB=(–)50mA

(–)60

(–)50

(–)5

(300)

350

140

150

(12)

8.5

(–180)

120

(–)0.9

V(BR)CBO IC=(–)10µA, IE=0

V(BR)CEO IC=(–)1mA, RBE=∞

V(BR)EBO

ton

tstg

IE=(–)10µA, IC=0

See specified Test Circuit

(–400)

250

(–)1.2

Conditons

Ratings

min

typ

max

(–)100

400

MHz

Unit

Marking:203

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/41594TH (KOTO) A8-9727 No.4496-1/4

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