High-side Bias Voltage Ground for W Phase IGBT Driving
High-side Common Supply Ground
Signal Input Terminal for High-side V Phase
High-side Bias Voltage for V Phase IC
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input Terminal for High-side U Phase
High-side Bias Voltage for U Phase IC
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
Internal Equivalent Circuit and Input/Output Pins
(29) V
B(U)
VB
(1) V
CC(L)
(2) COM
(L)
(3) IN
(UL)
(4) IN
(VL)
(5) IN
(WL)
(6) V
FO
V
CC
COM
(L)
IN
(UL)
IN
(VL)
IN
(WL)
V
(FO)
Wout
(7) C
FOD
(8) C
SC
(9) R
SC
(10) NC
(11) V
TH
(12) R
TH
THERMISTOR
C
(FOD)
C
(SC)
VB
HO
Vcc
IN
Vout
Uout
HO
Vcc
IN
(28) V
CC(UH)
(27) IN
(UH)
VS COM
(30) V
S(U)
(25) V
B(V)
VB
HO
Vcc
IN
(24) V
CC(VH)
(23) IN
(VH)
(22) COM
(H)
(26) V
S(V)
(20) V
B(W)
(19) V
CC(WH)
(18) IN
(WH)
VS COM
VS COM
(21) V
S(W)
W
(13)
V
(14)
U
(15)
N
(16)
P
(17)
Note
1. Inverter low-side ( (1) – (12) pins) is composed of three sense-IGBTs including freewheeling diodes for each IGBT and one control IC which has gate driving,
current sensing and protection functions.
2. Inverter power side ( (13) – (17) pins) is composed of two inverter dc-link input terminals and three inverter output terminals.
3. Inverter high-side ( (18) – (30) pins) is composed of three normal-IGBTs including freewheeling diodes and three drive ICs for each IGBT.
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