FPBL20SL60
FPBL20SL60
Smart Power Module (SPM)
General Description
FPBL20SL60 is an advanced smart power module (SPM)
that Fairchild has newly developed and designed to provide
very compact and low cost, yet high performance ac motor
drives mainly targeting low speed low-power inverter-driven
application like air conditioners. It combines optimized
circuit protection and drive matched to low-loss IGBTs.
Highly effective short-circuit current detection/protection is
realized through the use of advanced current sensing IGBT
chips that allow continuous monitoring of the IGBTs
current. System reliability is further enhanced by the
integrated under-voltage lock-out protection. The high
speed built-in HVIC provides opto-coupler-less IGBT gate
driving capability that further reduce the overall size of the
inverter system design. In addition the incorporated HVIC
facilitates the use of single-supply drive topology enabling
the FPBL20SL60 to be driven by only one drive supply
voltage without negative bias.
Features
• UL Certified No. E209204
• 600V-20A 3-phase IGBT inverter bridge including control
ICs for gate driving and protection
• Single-grounded power supply due to built-in HVIC
• Typical switching frequency of 3kHz
• Inverter power rating of 1.4kW / 100~253 Vac
• Isolation rating of 2500Vrms/min.
• Very low leakage current due to using ceramic substrate
• Adjustable current protection level by varying series
resistor value with sense-IGBTs
Applications
• AC 100V ~ 253V three-phase inverter drive for small
power (1.4kW) ac motor drives
• Home appliances applications requiring low switching
frequency operation like air conditioners drive system
• Application ratings:
- Power : 1.4kW / 100~253 Vac
- Switching frequency : Typical 3kHz (PWM Control)
- 100% load current : 10A (Irms)
External View and Marking Information
Top View
Bottom View
57 mm
55 mm
Marking
Device Name
Version, Lot Code
Fig. 1.
©2002 Fairchild Semiconductor Corporation
Rev. B1, February 2002
FPBL20SL60
Integrated Power Functions
•
600V-20A IGBT inverter for three-phase DC/AC power conversion (Please refer to Fig. 3)
Integrated Drive, Protection and System Control Functions
• For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting
Control circuit under-voltage (UV) protection
Note) Available bootstrap circuit example is given in Figs. 10, 15 and 16.
• For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC)
Control supply circuit under-voltage (UV) protection
• Fault signaling: Corresponding to a SC fault (Low-side IGBTs) or a UV fault (Low-side supply)
• Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Top View
V
S(U)
V
B(U)
V
CC(L)
COM
(L)
IN
(UL)
IN
(VL)
IN
(WL)
V
FO
C
FOD
C
SC
R
SC
NC
NC
NC
V
CC(UH)
IN
(UH)
V
S(V)
V
B(V)
V
CC(VH)
IN
(VH)
COM
(H)
V
S(W)
V
B(W)
V
CC(WH)
IN
(WH)
W
V
U
N
P
Fig. 2.
Pin Descriptions
Pin Number
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
Pin Name
V
CC(L)
COM
(L)
IN
(UL)
IN
(VL)
IN
(WL)
V
FO
C
FOD
C
SC
R
SC
NC
NC
NC
W
V
U
N
Pin Description
Low-side Common Bias Voltage for IC and IGBTs Driving
Low-side Common Supply Ground
Signal Input Terminal for Low-side U Phase
Signal Input Terminal for Low-side V Phase
Signal Input Terminal for Low-side W Phase
Fault Output Terminal
Capacitor for Fault Output Duration Time Selection
Capacitor (Low-pass Filter) for Short-current Detection Input
Resistor for Short-circuit Current Detection
No Connection
No Connection
No Connection
Output Terminal for W Phase
Output Terminal for V Phase
Output Terminal for U Phase
Negative DC–Link Input
©2002 Fairchild Semiconductor Corporation
Rev. B1, February 2002
FPBL20SL60
Pin Descriptions
(Continued)
Pin Number
17
18
19
20
21
22
23
24
25
26
27
28
29
30
Pin Name
P
IN
(WH)
V
CC(WH)
V
B(W)
V
S(W)
COM
(H)
IN
(VH)
V
CC(VH)
V
B(V)
V
S(V)
IN
(UH)
V
CC(UH)
V
B(U)
V
S(U)
Pin Description
Positive DC–Link Input
Signal Input Terminal for High-side W Phase
High-side Bias Voltage for W Phase IC
High-side Bias Voltage for W Phase IGBT Driving
High-side Bias Voltage Ground for W Phase IGBT Driving
High-side Common Supply Ground
Signal Input Terminal for High-side V Phase
High-side Bias Voltage for V Phase IC
High-side Bias Voltage for V Phase IGBT Driving
High-side Bias Voltage Ground for V Phase IGBT Driving
Signal Input Terminal for High-side U Phase
High-side Bias Voltage for U Phase IC
High-side Bias Voltage for U Phase IGBT Driving
High-side Bias Voltage Ground for U Phase IGBT Driving
Internal Equivalent Circuit and Input/Output Pins
(29) V
B(U)
VB
(1) V
CC(L)
(2) COM
(L)
(3) IN
(UL)
(4) IN
(VL)
(5) IN
(WL)
(6) V
FO
V
CC
COM
(L)
IN
(UL)
IN
(VL)
IN
(WL)
V
(FO)
Wout
(7) C
FOD
(8) C
SC
(9) R
SC
(10) NC
(11) NC
(12) NC
C
(FOD)
C
(SC)
VB
HO
Vcc
IN
Vout
Uout
HO
Vcc
IN
(28) V
CC(UH)
(27) IN
(UH)
VS COM
(30) V
S(U)
(25) V
B(V)
VB
HO
Vcc
IN
(24) V
CC(VH)
(23) IN
(VH)
(22) COM
(H)
(26) V
S(V)
(20) V
B(W)
(19) V
CC(WH)
(18) IN
(WH)
VS COM
VS COM
(21) V
S(W)
W
(13)
V
(14)
U
(15)
N
(16)
P
(17)
Note
1. Inverter low-side ( (1) - (12) pins) is composed of three sense-IGBTs including freewheeling diodes for each IGBT and one control IC which has gate driving,
current sensing and protection functions.
2. Inverter power side ( (13) - (17) pins) is composed of two inverter dc-link input terminals and three inverter output terminals.
3. Inverter high-side ( (18) - (30) pins) is composed of three normal-IGBTs including freewheeling diodes and three drive ICs for each IGBT.
Fig. 3.
©2002 Fairchild Semiconductor Corporation
Rev. B1, February 2002
FPBL20SL60
Absolute Maximum Ratings
Inverter Part
(T
C
= 25°C,
Item
Supply Voltage
Supply Voltage (Surge)
Collector-Emitter Voltage
Each IGBT Collector Current
Each IGBT Collector Current (Peak)
Collector Dissipation
Operating Junction Temperature
Unless Otherwise Specified)
Symbol
V
DC
V
PN(Surge)
V
CES
± I
C
± I
CP
P
C
T
J
T
C
= 25°C (Note Fig. 4)
T
C
= 25°C (Note Fig. 4)
T
C
= 25°C per One Chip
(Note 1)
Condition
Applied to DC - Link
Applied between P- N
Rating
450
500
600
20
40
50
-55 ~ 150
Unit
V
V
V
A
A
W
°C
Note
1. It would be recommended that the average junction temperature should be limited to T
J
≤
125°C (@T
C
≤
100°C) in order to guarantee safe operation.
Control Part
(T
C
= 25°C,
Item
Control Supply Voltage
Unless Otherwise Specified)
Symbol
Condition
Applied between V
CC(H)
- COM
(H)
, V
CC(L)
- COM
(L)
V
CC
V
BS
V
IN
V
FO
I
FO
V
SC
Applied between V
B(U)
- V
S(U)
, V
B(V)
- V
S(V)
, V
B(W)
-
V
S(W)
Applied between IN
(UH)
, IN
(VH)
, IN
(WH)
- COM
(H)
IN
(UL)
, IN
(VL)
, IN
(WL)
- COM
(L)
Applied between V
FO
- COM
(L)
Sink Current at V
FO
Pin
Applied between C
SC
- COM
(L)
Rating
18
20
-0.3 ~ 6.0
-0.3~V
CC
+0.5
5
-0.3~V
CC
+0.5
Unit
V
V
V
V
mA
V
High-side Control Bias Voltage
Input Signal Voltage
Fault Output Supply Voltage
Fault Output Current
Current Sensing Input Voltage
Total System
Item
Self Protection Supply Voltage Limit
(Short Circuit Protection Capability)
Module Case Operation Temperature
Storage Temperature
Isolation Voltage
Symbol
Condition
V
DC(PROT)
Applied to DC - Link,
V
CC
= V
BS
= 13.5 ~ 16.5V
T
J
= 125°C, Non-repetitive, less than 6µs
T
C
T
STG
V
ISO
60Hz, Sinusoidal, AC 1 minute, Connection
Pins to Heat-sink Plate
Note Fig. 4
Rating
400
Unit
V
-20 ~ 100
-55 ~ 150
2500
°C
°C
V
rms
©2002 Fairchild Semiconductor Corporation
Rev. B1, February 2002
FPBL20SL60
Case Temperature (T
C
) Detecting Point
V
S(U)
V
B(U)
V
CC(L)
COM
(L)
IN
(UL)
IN
(VL)
IN
(WL)
V
FO
C
FOD
C
SC
R
SC
NC
NC
NC
V
CC(UH)
IN
(UH)
V
S(V)
V
B(V)
V
CC(VH)
IN
(VH)
COM
(H)
V
S(W)
V
B(W)
V
CC(WH)
IN
(WH)
Ceramic
Substate
W
V
U
N
P
Fig. 4. T
c
Measurement Point
©2002 Fairchild Semiconductor Corporation
Rev. B1, February 2002
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