FPN660/FPN660A
FPN660/FPN660A
PNP Low Saturation Transistor
• These devices are designed for high current gain and low saturation
voltage with collector currents up to 3.0A continuous.
• Sourced from process PA.
C
BE
TO-226
Absolute Maximum Ratings
T
A
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
FPN660
60
80
5
3
-55 ~ +150
FPN660A
60
60
5
3
-55 ~ +150
Units
V
V
V
A
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltage (V) and currents (A) are negative polarity for PNP transistors
Electrical Characteristics
T
A
=25°C unless otherwise noted
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
Parameter
Test Conditions
I
C
= 10mA, I
B
= 0
I
E
= 100µA, I
E
= 0
I
E
= 100µA, I
C
= 0
V
CB
= 30V, I
E
= 0
V
CB
= 30V, I
E
= 0, T
A
= 100°C
V
EB
= 4.0V, I
C
= 0
I
C
= 100mA, V
CE
= 2.0V
I
C
= 500mA, V
CE
= 2.0V
I
C
= 1.0A, V
CE
= 2.0V
I
C
= 2.0A, V
CE
= 2.0V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 1.0A, I
B
= 100mA
I
C
= 2.0A, I
B
= 200mA
I
C
= 1.0A, I
B
= 100mA
I
C
= 1.0A, V
CE
= 2.0V
V
CB
= 10V, I
E
= 0, f = 1MHz
I
C
= 100mA, V
CE
= 5.0V,
f = 100MHz
75
FPN660
FPN660A
70
100
250
80
40
FPN660
FPN660A
Min.
55
80
60
5.0
100
10
100
Typ.
Max.
Units
V
V
V
V
nA
µA
nA
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
On Characteristics *
FPN660
FPN660A
300
550
300
450
400
1.25
1.0
45
mV
mV
mV
V
V
pF
MHz
V
BE
(sat)
V
BE
(on)
C
obo
f
T
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
Transition Frequency
Small Signal Characteristics
* Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2.0%
NOTE:
All voltage (V) and currents (A) are negative polarity for PNP transistors.
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
FPN660/FPN660A
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
FPN660/FPN660A
1
50
125
Units
W
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
FPN660/FPN660A
Typical Characteristics
V
-BASE-EMITTER SATURATION VOLTAGE(V)
BESAT
β = 10
1.4
1.2
β = 10
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
β
Voltage vs Collector Current
= 10
β = 10
Base-Emitter On Voltage vs.
Collector Current
1.6
1.4
1.2
1
- 40°C
V
ce
= 2.0V
β = 10
β = 10
1
- 40°C
0.8
0.6
0.4
0.2
0.001
25°C
125°C
0.8
0.6
0.4
125°C
25°C
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
0.2
0.0001
0.001
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
Figure 1. Base-Emitter Saturation Voltage
vs Collector Current
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
β = 10
Figure 2. Base-Emitter On Voltag
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
400
350
CAPACITANCE (pf)
125°C
25°C
0.8
β = 10
β = 10
β = 10
β = 10
Input/Output Capacitance vs.
Reverse Bias Voltage
f V
ce
= 2.0V
= 1.0MHz
C
obo
0.7
= 10
β
0.6
0.5
0.4
0.3
300
250
200
150
100
50
C
ibo
- 40°C
0.2
0.1
0
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
0
0.1
0.5 1
10 20
V
CE
- COLLECTOR VOLTAGE (V)
50
100
Figure 3. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 4. Input/Output Capacitance
vs Reverse Bias Voltage
Current Gain vs. Collector Current
1000
900
H
FE
- CURRENT GAIN
800
700
600
500
400
300
200
100
0
0.0001
0.001
0.01
0.1
1
I
C
- COLLECTOR CURRENT (A)
10
- 40°C
25°C
125°C
V
ce
= 2.0V
Ambient Temperature
P
D
- POWER DIS SIPATION (W)
1
TO-226
0.75
0.5
0.25
0
0
25
50
75
100
TEMPERATURE (
°
C)
125
150
Figure 5. Current Gain vs Collector Current
Figure 6. Power Dissipation vs Ambient Temperature
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
FPN660/FPN660A
Package Dimensions
TO-226
S4.70-4.32;
S1.52-1.02;
2" TYP
S7.87-7.37;
S7.73-7.10;
S1.65-1.27;
2" TYP
0.51
S0.76-
0.36;
S15.61-14.47;
S0.51-0.36;
S0.48-0.30;
S1.40-
1.14;
S1.40-1.14;
PIN
99
E
B
C
95
E
C
B
S4.45-3.81;
1
5" TYP
2
3
1
2
3
TO-226AE (95,99)
S2.41-2.13;
For leadformed option ordering,
refer to Tape & Reel data information.
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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