EEWORLDEEWORLDEEWORLD

Part Number

Search

FQB27P06

Description
60V P-Channel MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size700KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

FQB27P06 Overview

60V P-Channel MOSFET

FQB27P06 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFAST SWITCHING, AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)560 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)27 A
Maximum drain current (ID)27 A
Maximum drain-source on-resistance0.07 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)245
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)120 W
Maximum pulsed drain current (IDM)108 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
FQB27P06 / FQI27P06
May 2001
QFET
FQB27P06 / FQI27P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand a high energy pulse in the
avalanche and commutation modes. These devices are
well suited for low voltage applications such as automotive,
DC/DC converters, and high efficiency switching for power
management in portable and battery operated products.
TM
Features
-27A, -60V, R
DS(on)
= 0.07Ω @V
GS
= -10 V
Low gate charge ( typical 33 nC)
Low Crss ( typical 120 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
175°C maximum junction temperature rating
D
G
!
G
S
!
▶ ▲
S
D
2
-PAK
FQB Series
G D S
I
2
-PAK
FQI Series
!
D
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQB27P06 / FQI27P06
-60
-27
-19.1
-108
±
25
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
560
-27
12
-7.0
3.75
120
0.8
-55 to +175
300
T
J
, T
STG
T
L
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
1.25
40
62.5
Units
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001

FQB27P06 Related Products

FQB27P06 FQI27P06
Description 60V P-Channel MOSFET 60V P-Channel MOSFET
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker Fairchild Fairchild
Parts packaging code D2PAK TO-262AA
package instruction SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features FAST SWITCHING, AVALANCHE RATED FAST SWITCHING, AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas) 560 mJ 560 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V
Maximum drain current (Abs) (ID) 27 A 27 A
Maximum drain current (ID) 27 A 27 A
Maximum drain-source on-resistance 0.07 Ω 0.07 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-262AA
JESD-30 code R-PSSO-G2 R-PSIP-T3
Number of components 1 1
Number of terminals 2 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) 245 NOT SPECIFIED
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 120 W 120 W
Maximum pulsed drain current (IDM) 108 A 108 A
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal form GULL WING THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
How to clear USB pipe buffer in application?
I am currently working on a program that transfers data to another PC via a USB interface. The PC is connected to a development board via a USB interface, and another USB interface on the development ...
taorufei Embedded System
AXD debugging issues
My source code is very simple, as follows: 1: ldr r0,=WTCON ;watch dog disable 2: ldr r1,=0x0 3: str r1,[r0] ldr r0,=INTMSK ldr r1,=0xffffffff ;all interrupt disable str r1,[r0] ldr r0,=INTSUBMSK ldr ...
dlj0521 Embedded System
New detector for autonomous driving lidar: near-infrared MPPC
#What is LiDAR? Today, "LiDAR" is no longer a strange concept, especially with the boom of autonomous driving, it has also attracted much attention. LiDAR is actually a radar that works in the optical...
窗外的麻雀 Robotics Development
mPython 0.3.7 released
...
eagler8 MicroPython Open Source section
What is the difference between KMD and WDM in implementing ring0?
For example, if I want my code to enter ring0, which of these two drivers should I use? What are the differences between them? They have the same functions in implementing ring0....
cocojy Embedded System
PWM Operation of MSP430 MCU
//******************************************************************************* // Description: MSP430 implements PWM. Reflected on the LED light, you can see that the brightness of the LED light is...
fish001 Microcontroller MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1284  2101  1567  2575  2873  26  43  32  52  58 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号