300V N-Channel MOSFET
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Fairchild |
| Parts packaging code | TO-262 |
| package instruction | IN-LINE, R-PSIP-T3 |
| Contacts | 3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 100 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 300 V |
| Maximum drain current (Abs) (ID) | 2.1 A |
| Maximum drain current (ID) | 2.1 A |
| Maximum drain-source on-resistance | 3.7 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-262AA |
| JESD-30 code | R-PSIP-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 40 W |
| Maximum pulsed drain current (IDM) | 8.4 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
"
!
!
$
!
1
) . 2
) *2
"
+
+
;
;
!!$
5
<
<
( " >
<
( "
| FQI2N30 | FQB2N30 | |
|---|---|---|
| Description | 300V N-Channel MOSFET | 300V N-Channel MOSFET |
| Is it Rohs certified? | incompatible | incompatible |
| Maker | Fairchild | Fairchild |
| Parts packaging code | TO-262 | TO-263 |
| package instruction | IN-LINE, R-PSIP-T3 | SMALL OUTLINE, R-PSSO-G2 |
| Contacts | 3 | 3 |
| Reach Compliance Code | unknown | unknow |
| ECCN code | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 100 mJ | 100 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 300 V | 300 V |
| Maximum drain current (Abs) (ID) | 2.1 A | 2.1 A |
| Maximum drain current (ID) | 2.1 A | 2.1 A |
| Maximum drain-source on-resistance | 3.7 Ω | 3.7 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-262AA | TO-263AB |
| JESD-30 code | R-PSIP-T3 | R-PSSO-G2 |
| JESD-609 code | e0 | e0 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 40 W | 40 W |
| Maximum pulsed drain current (IDM) | 8.4 A | 8.4 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | YES |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
京公网安备 11010802033920号
EEWORLD
