EEWORLDEEWORLDEEWORLD

Part Number

Search

FQI3N25

Description
250V N-Channel MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size621KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

FQI3N25 Overview

250V N-Channel MOSFET

FQI3N25 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-262AA
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)40 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage250 V
Maximum drain current (Abs) (ID)2.8 A
Maximum drain current (ID)2.8 A
Maximum drain-source on-resistance2.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)45 W
Maximum pulsed drain current (IDM)11.2 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
FQB3N25 / FQI3N25
November 2000
QFET
FQB3N25 / FQI3N25
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply.
TM
Features
2.8A, 250V, R
DS(on)
= 2.2Ω @V
GS
= 10 V
Low gate charge ( typical 4.0 nC)
Low Crss ( typical 4.7 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
D
!
"
G
S
G
!
! "
"
"
D
2
-PAK
FQB Series
G D S
I
2
-PAK
FQI Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQB3N25 / FQI3N25
250
2.8
1.77
11.2
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
40
2.8
4.5
5.5
3.13
45
0.36
-55 to +150
300
T
J
, T
STG
T
L
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
2.78
40
62.5
Units
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Rev. A, November 2000

FQI3N25 Related Products

FQI3N25 FQB3N25
Description 250V N-Channel MOSFET 250V N-Channel MOSFET
Is it Rohs certified? incompatible incompatible
Maker Fairchild Fairchild
Parts packaging code TO-262AA D2PAK
package instruction IN-LINE, R-PSIP-T3 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 40 mJ 40 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 250 V 250 V
Maximum drain current (Abs) (ID) 2.8 A 2.8 A
Maximum drain current (ID) 2.8 A 2.8 A
Maximum drain-source on-resistance 2.2 Ω 2.2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-262AA TO-263AB
JESD-30 code R-PSIP-T3 R-PSSO-G2
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 45 W 45 W
Maximum pulsed drain current (IDM) 11.2 A 11.2 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
ESPyHarp Coding Experience
Thanks to dcexpert moderator for introducing this ESP8266 IDE - ESPyHarp, written by a Korean. The current version on the official website is ver 0.1.1, but after downloading it, the version on the ru...
slotg MicroPython Open Source section
Various parameters in adsl
Item Description Product Information SmartAX MT800 MAC address 00:73:06:14:2F:68 Software version V100R001B016 Firmware version Y.1.28.210 / 2.8.051115r Release date May 9, 2006 Batch number SCCAP1 AD...
cnnbxc Embedded System
Infrared and parallel port communication??
How to operate a infrared photoelectric switch and communicate with the parallel port?...
suaimei Embedded System
Embedded Development
Who can provide some relevant information about UCOS-II?...
xief0925 Embedded System
Configuration issues with CC2500 wireless chip
I think some of you have used CC2500 wireless chip? I am using it recently, but I have a lot of questions about its configuration. I hope experts can give me some advice and help me get out of the sea...
suiyueliusha Microcontroller MCU
Introduction of static induction cable detector
[font=Times New Roman] [/font] [font=宋体][size=10.5pt]The electrostatic induction perimeter alarm detector is essentially different from perimeter alarm systems such as microwave radiation, infrared ra...
GJUN666 Industrial Control Electronics

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1087  2233  2683  405  832  22  45  55  9  17 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号