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FQT13N06L

Description
60V LOGIC N-Channel MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size676KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

FQT13N06L Overview

60V LOGIC N-Channel MOSFET

FQT13N06L Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeSOT-223
package instructionSOT-223, 4 PIN
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)2.8 A
Maximum drain current (ID)2.8 A
Maximum drain-source on-resistance0.14 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)23 pF
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2.1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
FQT13N06L
May 2001
QFET
FQT13N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
TM
Features
2.8A, 60V, R
DS(on)
= 0.11Ω @V
GS
= 10 V
Low gate charge ( typical 4.8 nC)
Low Crss ( typical 17 pF)
Fast switching
Improved dv/dt capability
D
!
D
"
S
G
G
!
! "
"
"
SOT-223
FQT Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 70°C)
Drain Current
- Pulsed
(Note 1)
FQT13N06L
60
2.8
2.24
11.2
±
20
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
85
2.8
0.21
7.0
2.1
0.017
-55 to +150
300
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJA
Parameter
Thermal Resistance, Junction-to-Ambient *
Typ
--
Max
60
Units
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
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