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FR107G

Description
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size78KB,2 Pages
ManufacturerBytes
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FR107G Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

FR101G
THRU
FR107G
1.0
AMP GLASS PASSIVATED FAST RECOVERY RECTIFIERS
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* Glass passivated junction
1.0 Ampere
DO-41
.107(2.7)
.080(2.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.34 grams
.205(5.2)
.166(4.2)
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=55 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
FR101G FR102G FR103G FR104G FR105G FR106G FR107G
UNITS
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
1.3
5.0
100
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
µA
150
15
-65 +175
250
500
µA
nS
pF
C
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
190

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FR107G FR103G FR104G FR105G FR106G
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