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JANTX1N5441B

Description
Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, Abrupt, DO-7
CategoryDiscrete semiconductor    diode   
File Size45KB,1 Pages
ManufacturerCobham Semiconductor Solutions
Download Datasheet Parametric View All

JANTX1N5441B Overview

Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, Abrupt, DO-7

JANTX1N5441B Parametric

Parameter NameAttribute value
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage30 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio2.7
Nominal diode capacitance6.8 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor600
GuidelineMIL
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Varactor Diode ClassificationABRUPT
Base Number Matches1
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#define GPBCON(*(volatile unsigned long*)0x56000010) #define GPBDAT(*(volatile unsigned long*)0x56000014) # define GPB5_out(1<<(5*2)) GPBCON=GPB5_out; GPBDAT &= ~ (1<<5);...
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