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1N5441CCHIP

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size60KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

1N5441CCHIP Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 6.8pF C(T), 30V, Silicon, Abrupt

1N5441CCHIP Parametric

Parameter NameAttribute value
package instructionX-XUUC-N
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresGOOD Q
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance2%
Minimum diode capacitance ratio2.5
Nominal diode capacitance6.8 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeX-XUUC-N
Number of components1
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Certification statusNot Qualified
minimum quality factor450
Maximum repetitive peak reverse voltage30 V
Maximum reverse current2e-8 µA
Reverse test voltage25 V
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Varactor Diode ClassificationABRUPT
Base Number Matches1
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