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CT25AS-8-T1

Description
Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, MP-3, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size62KB,2 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric Compare View All

CT25AS-8-T1 Overview

Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, MP-3, 3 PIN

CT25AS-8-T1 Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Collector-emitter maximum voltage400 V
ConfigurationSINGLE
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Transistor component materialsSILICON
Base Number Matches1

CT25AS-8-T1 Related Products

CT25AS-8-T1 CT25AS-8-T2
Description Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, MP-3, 3 PIN Insulated Gate Bipolar Transistor, 400V V(BR)CES, N-Channel, MP-3, 3 PIN
Maker Mitsubishi Mitsubishi
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Shell connection COLLECTOR COLLECTOR
Collector-emitter maximum voltage 400 V 400 V
Configuration SINGLE SINGLE
JESD-30 code R-PSSO-G2 R-PSSO-G2
Number of components 1 1
Number of terminals 2 2
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location SINGLE SINGLE
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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