EEWORLDEEWORLDEEWORLD

Part Number

Search

FR303

Description
3 A, 200 V, SILICON, RECTIFIER DIODE, DO-27
CategoryDiscrete semiconductor    diode   
File Size24KB,2 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
Download Datasheet Parametric Compare View All

FR303 Overview

3 A, 200 V, SILICON, RECTIFIER DIODE, DO-27

FR303 Parametric

Parameter NameAttribute value
MakerFORMOSA
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage200 V
Maximum reverse current5 µA
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
FR301
3.0 AMP FAST RECOVERY RECTIFIERS
THRU
FR307
VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
3.0 Amperes
DO-27
.220(5.6)
.197(5.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 1.10 grams
.375(9.5)
.285(7.2)
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=75 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 3.0A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
FR301 FR302 FR303
50
35
50
100
70
100
200
140
200
FR304 FR305 FR306 FR307 UNITS
400
280
400
3.0
200
1.3
5.0
150
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
mA
250
60
-65 +150
500
mA
nS
pF
C
150
1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

FR303 Related Products

FR303 FR301 FR302 FR304 FR305 FR306 FR307
Description 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-27 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-27 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknow unknown unknow unknow unknow unknow
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V 1.3 V
JEDEC-95 code DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 200 A 200 A 200 A 200 A 200 A 200 A 200 A
Number of components 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 200 V 50 V 100 V 400 V 600 V 800 V 1000 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
Maximum reverse recovery time 0.15 µs 0.15 µs 0.15 µs 0.15 µs 0.25 µs 0.5 µs 0.5 µs
surface mount NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
Maker FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA -
What do you think about the Device Erratasheet (errata document?) of MSP430?
[color=#222222][backcolor=rgb(238, 238, 238)][font=sans-serif]What do you think of the Device Erratasheet (can it be called an errata document?) for MSP430? [/font][/backcolor][/color] [color=#222222]...
wangfuchong Microcontroller MCU
[Nucleo G071 Review] Serial port 1 idle interrupt + DMA to achieve variable length reception
After two days and one night of exploration, I finally figured out the temperament of the DMA of the G0 series models, and I can carry out my next serial port variable length reception DEMO. The G0 se...
donatello1996 stm32/stm8
[Repost] Why do startups fail? — Summary from 2 years of actual incubation work
The original title is: Why do college students' entrepreneurship fail? -- A summary of 2 years of actual incubation work. I think it is very universal, so I removed the word "college students" [p=28, ...
wstt Talking about work
About ARM external memory expansion
I am currently developing an ARM920T core ARM chip. Since this chip has no on-chip memory, I am using an emulator to develop it. To expand the external SRAM, does the bandwidth of the expanded SRAM ne...
liyz2169 ARM Technology
Essential for learning
The most important thing we learn is the data manual and the user guide. We should check them frequently so that we can make faster progress and understand them better....
Widic Microcontroller MCU
If you are developing a biological big data management platform, how should you choose UDP/TCP technology to improve the performance of big data transmission?
If you develop a biological big data management platform, how should you choose UDP/TCP technology to improve the performance of big data transmission....
Sassa的番茄号 TI Technology Forum

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2892  390  632  293  1653  59  8  13  6  34 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号