FR307 datasheet, PDF - EEWORLD Datasheet

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FR307: Description3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD; CategoryDiscrete semiconductor diode; File Size48KB，2 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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FR307 Overview

3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD

FR307 Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	O-PALF-W2
Reach Compliance Code	unknow
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-50 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.5 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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LESHAN RADIO COMPANY, LTD.

FR301 – FR307P

3A FAST RECOVERY DIODES

Maximum Average

TYPE

Maximum

Peak Reverse

Voltage

PRV

Maximum

Reverse

Current @ PRV

@ T

=25ºC

Maximum

Forward

Voltage

@ T

=25ºC

Maximum

Reverse

Recovery Time

Trr

Package

Dimensions

Rectified Current

Forward Peak

@ Half-Wave

Surge Current @

Resistive Load 60Hz 8.3ms Superimposed

@ T

ºC

(Surge)

µAdc

FR301

FR302

FR303

FR304

FR305

FR306

FR307

FR307P

100

200

400

600

800

1000

3.0

200

3.0

1.3

150

250

500

250

DO – 201AD

Trr

= 0.5A, I

= 1.0A, I

= 0.25A

Trr Test Conditions: I

= 0.5A, I

= 1.0A, I

= 0.25A

1.0(25.4)

MIN

.375(9.5)

.335(8.5)

1.0(25.4)

MIN

.052(1.3)

.048(1.2)

DIA

.220(5.6) DIA

.197(5.0)

DO – 201AD

20A–1/2

FR307 Related Products

	FR307	FR306	FR307P
Description	3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 800 V, SILICON, RECTIFIER DIODE, DO-27	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
Maker	LRC	LRC	LRC
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknow	unknow	unknow
application	EFFICIENCY	EFFICIENCY	EFFICIENCY
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V	1.3 V	1.3 V
JEDEC-95 code	DO-201AD	DO-201AD	DO-201AD
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	150 A	150 A	150 A
Number of components	1	1	1
Phase	1	1	1
Number of terminals	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C
Minimum operating temperature	-50 °C	-50 °C	-50 °C
Maximum output current	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	1000 V	800 V	1000 V
Maximum reverse current	5 µA	5 µA	5 µA
Maximum reverse recovery time	0.5 µs	0.5 µs	0.25 µs
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL

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